Inventor

HAMANO KENICHI

JP18 patents

⚠️ This page may combine multiple inventors who share the name “HAMANO KENICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HAMANO KENICHI

MITSUBISHI ELECTRIC CORP

Method for manufacturing silicon carbide semiconductor device

Method for manufacturing SiC epitaxial wafer

Single-crystal 4H-SiC substrate

Semiconductor wafer, semiconductor device, and method for producing semiconductor device

SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatus

Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus

Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus

Single-crystal 4H-SiC substrate

Method for manufacturing a single-crystal 4H—SiC substrate

Silicon carbide semiconductor device with a main cell outputting main current and a sense cell outputting sense current wherein the inclination of temperature dependent properties of the main current is approximately flat in a temperature of 0 *C or less

Semiconductor device

Substrate mounting member, wafer plate, and SiC epitaxial substrate manufacturing method

Method of manufacturing silicon carbide epitaxial wafer

SONY CORP

Photo video camera device

Photovideo camera

HATTORI RYO

Film thickness measurement method

HAMANO KENICHI

Method for manufacturing silicon carbide semiconductor device

TOMITA NOBUYUKI

Method of manufacturing silicon carbide epitaxial wafer