Inventor
LILIENFELD DAVID ALAN
US20 patents
⚠️ This page may combine multiple inventors who share the name “LILIENFELD DAVID ALAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GEN ELECTRIC
18 patentsUS9704949B1Jul 11, 2017
Active area designs for charge-balanced diodes
GEN ELECTRIC14 citations83
US11233157B2Jan 25, 2022
Systems and methods for unipolar charge balanced semiconductor power devices
GEN ELECTRIC2 citations73
US10600649B2Mar 24, 2020
Systems and method for charge balanced semiconductor power devices with fast switching capability
GEN ELECTRIC2 citations72
US10586846B2Mar 10, 2020
System and method for edge termination of super-junction (SJ) devices
GEN ELECTRIC2 citations72
US10243039B2Mar 26, 2019
Super-junction semiconductor power devices with fast switching capability
GEN ELECTRIC5 citations72
US10002920B1Jun 19, 2018
System and method for edge termination of super-junction (SJ) devices
GEN ELECTRIC2 citations72
US10014388B1Jul 3, 2018
Transient voltage suppression devices with symmetric breakdown characteristics
GEN ELECTRIC4 citations71
US11056586B2Jul 6, 2021
Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devices
GEN ELECTRIC3 citations69
US12191384B2Jan 7, 2025
Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devices
GEN ELECTRIC0 citations62
US10957759B2Mar 23, 2021
Systems and methods for termination in silicon carbide charge balance power devices
GEN ELECTRIC0 citations62
US10541338B2Jan 21, 2020
Edge termination designs for silicon carbide super-junction power devices
GEN ELECTRIC1 citations62
US11764257B2Sep 19, 2023
Systems and methods for junction termination of wide band gap super-junction power devices
GEN ELECTRIC0 citations61
US11271076B2Mar 8, 2022
Systems and methods for junction termination in semiconductor devices
GEN ELECTRIC0 citations61
US11245003B2Feb 8, 2022
Systems and methods for junction termination of wide band gap super-junction power devices
GEN ELECTRIC0 citations61
US11417759B2Aug 16, 2022
Semiconductor device and method for reduced bias threshold instability
GEN ELECTRIC0 citations59
US11069772B2Jul 20, 2021
Techniques for fabricating planar charge balanced (CB) metal-oxide-semiconductor field-effect transistor (MOSFET) devices
GEN ELECTRIC0 citations52
US10608079B2Mar 31, 2020
High energy ion implantation for junction isolation in silicon carbide devices
GEN ELECTRIC0 citations51
US10636660B2Apr 28, 2020
Super-junction semiconductor device fabrication
GEN ELECTRIC0 citations41