Inventor
KALUTARAGE LAKMAL C
US19 patents
⚠️ This page may combine multiple inventors who share the name “KALUTARAGE LAKMAL C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
16 patentsUS11398388B2Jul 26, 2022
Methods for selective dry etching gallium oxide
APPLIED MATERIALS INC2 citations71
US11371136B2Jun 28, 2022
Methods for selective deposition of dielectric on silicon oxide
APPLIED MATERIALS INC2 citations70
US12131900B2Oct 29, 2024
Methods for depositing blocking layers on metal surfaces
APPLIED MATERIALS INC0 citations62
US11417515B2Aug 16, 2022
Methods for depositing blocking layers on metal surfaces
APPLIED MATERIALS INC0 citations62
US12281382B2Apr 22, 2025
Methods for depositing blocking layers on conductive surfaces
APPLIED MATERIALS INC0 citations60
US11942330B2Mar 26, 2024
Methods for selective dry etching gallium oxide
APPLIED MATERIALS INC0 citations60
US11702733B2Jul 18, 2023
Methods for depositing blocking layers on conductive surfaces
APPLIED MATERIALS INC0 citations60
US11393678B2Jul 19, 2022
Low-k dielectric films
APPLIED MATERIALS INC0 citations60
US11515149B2Nov 29, 2022
Deposition of flowable silicon-containing films
APPLIED MATERIALS INC1 citations59
US12500080B2Dec 16, 2025
Systems and methods for depositing low-K dielectric films
APPLIED MATERIALS INC0 citations58
US10354861B2Jul 16, 2019
Low temperature molecular layer deposition of SiCON
APPLIED MATERIALS INC0 citations52
US12031209B2Jul 9, 2024
Reducing agents for atomic layer deposition
APPLIED MATERIALS INC0 citations51
US12018363B2Jun 25, 2024
Gap-fill with aluminum-containing films
APPLIED MATERIALS INC0 citations51
US11289328B2Mar 29, 2022
Deposition and etch processes of chromium-containing thin films for semiconductor manufacturing
APPLIED MATERIALS INC0 citations51
US10760159B2Sep 1, 2020
Methods and apparatus for depositing yttrium-containing films
APPLIED MATERIALS INC0 citations51
US11107674B2Aug 31, 2021
Methods for depositing silicon nitride
APPLIED MATERIALS INC0 citations50
UNIV WAYNE STATE
3 patentsUS9758866B2Sep 12, 2017
Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films
UNIV WAYNE STATE0 citations51
US9714464B2Jul 25, 2017
Precursors for atomic layer deposition
UNIV WAYNE STATE0 citations51
US8907115B2Dec 9, 2014
Synthesis and characterization of first row transition metal complexes containing α-keto hydrazonate ligands as potential precursors for use in metal film deposition
UNIV WAYNE STATE1 citations51