Inventor
WANG CHUNYAO
TW36 patents
⚠️ This page may combine multiple inventors who share the name “WANG CHUNYAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
33 patentsUS10134604B1Nov 20, 2018
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US11437245B2Sep 6, 2022
Germanium hump reduction
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations81
US10483168B2Nov 19, 2019
Low-k gate spacer and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11652158B2May 16, 2023
Field-effect transistor device with gate spacer structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11393674B2Jul 19, 2022
Forming low-stress silicon nitride layer through hydrogen treatment
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11380776B2Jul 5, 2022
Field-effect transistor device with gate spacer structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11929254B2Mar 12, 2024
Semiconductor patterning and resulting structures
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11521856B2Dec 6, 2022
Semiconductor patterning and resulting structures
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations71
US12444602B2Oct 14, 2025
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12419097B2Sep 16, 2025
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12342605B2Jun 24, 2025
Semiconductor device with fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12266728B2Apr 1, 2025
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12261036B2Mar 25, 2025
Forming low-stress silicon nitride layer through hydrogen treatment
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12176349B2Dec 24, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12148813B2Nov 19, 2024
Field-effect transistor device with gate spacer structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12002719B2Jun 4, 2024
Gapfill structure and manufacturing methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11942549B2Mar 26, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11935746B2Mar 19, 2024
Pattern formation through mask stress management and resulting structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11830727B2Nov 28, 2023
Forming low-stress silicon nitride layer through hydrogen treatment
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11764221B2Sep 19, 2023
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11688645B2Jun 27, 2023
Structure and formation method of semiconductor device with fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11557518B2Jan 17, 2023
Gapfill structure and manufacturing methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11527653B2Dec 13, 2022
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12125911B2Oct 22, 2024
Method of modulating stress of dielectric layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11502196B2Nov 15, 2022
Stress modulation for dielectric layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12437996B2Oct 7, 2025
Semiconductor patterning and resulting structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11854819B2Dec 26, 2023
Germanium hump reduction
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10867807B2Dec 15, 2020
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10854521B2Dec 1, 2020
Low-k gate spacer and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510612B2Dec 17, 2019
Low-K gate spacer and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12266541B2Apr 1, 2025
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11955370B2Apr 9, 2024
Semiconductor devices and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10720526B2Jul 21, 2020
Stress modulation for dielectric layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51