Inventor
SHIODA TOMONARI
JP34 patents
⚠️ This page may combine multiple inventors who share the name “SHIODA TOMONARI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
9 patentsUS9312436B2Apr 12, 2016
Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
TOSHIBA KK3 citations73
US8872158B2Oct 28, 2014
Semiconductor light emitting device
TOSHIBA KK3 citations63
US8790999B2Jul 29, 2014
Method for manufacturing nitride semiconductor crystal layer
TOSHIBA KK2 citations63
US9478706B2Oct 25, 2016
Semiconductor light emitting device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
TOSHIBA KK0 citations52
US8987026B2Mar 24, 2015
Semiconductor light emitting device
TOSHIBA KK0 citations52
US8969891B2Mar 3, 2015
Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer
TOSHIBA KK0 citations52
US8835983B2Sep 16, 2014
Nitride semiconductor device including a doped nitride semiconductor between upper and lower nitride semiconductor layers
TOSHIBA KK0 citations52
US8759851B2Jun 24, 2014
Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer
TOSHIBA KK0 citations52
US8647905B2Feb 11, 2014
Semiconductor light emitting device and method for manufacturing same
TOSHIBA KK0 citations52
SHIODA TOMONARI
8 patentsUS8785943B2Jul 22, 2014
Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
SHIODA TOMONARI10 citations83
US8779437B2Jul 15, 2014
Wafer, crystal growth method, and semiconductor device
SHIODA TOMONARI2 citations62
US8728237B2May 20, 2014
Crystal growth method for nitride semiconductor having a multiquantum well structure
SHIODA TOMONARI2 citations62
US8698123B2Apr 15, 2014
Semiconductor light emitting device
SHIODA TOMONARI2 citations62
US8610106B2Dec 17, 2013
Semiconductor light emitting device
SHIODA TOMONARI3 citations62
US8525194B2Sep 3, 2013
Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer
SHIODA TOMONARI3 citations62
US8604496B2Dec 10, 2013
Optical semiconductor device
SHIODA TOMONARI1 citations52
US8692287B2Apr 8, 2014
Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
SHIODA TOMONARI0 citations41
SUGIYAMA NAOHARU
4 patentsUS8952401B2Feb 10, 2015
Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer
SUGIYAMA NAOHARU3 citations61
US8878213B2Nov 4, 2014
Semiconductor light emitting device
SUGIYAMA NAOHARU0 citations51
US8476151B2Jul 2, 2013
Method for manufacturing nitride semiconductor crystal layer
SUGIYAMA NAOHARU0 citations51
US9130098B2Sep 8, 2015
Semiconductor light emitting device
SUGIYAMA NAOHARU0 citations40
TOSHIBA MEMORY CORP
3 patentsKIOXIA CORP
3 patentsUS11075122B2Jul 27, 2021
Semiconductor device and manufacturing method thereof
KIOXIA CORP2 citations73
US11955545B2Apr 9, 2024
Semiconductor device and method of manufacturing the same
KIOXIA CORP0 citations62
US12125878B2Oct 22, 2024
Semiconductor device and manufacturing method thereof
KIOXIA CORP0 citations43