Inventor
NAGO HAJIME
JP59 patents
⚠️ This page may combine multiple inventors who share the name “NAGO HAJIME”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
35 patentsUS9590141B2Mar 7, 2017
Semiconductor light emitting device having a p-type semiconductor layer with a p-type impurity
TOSHIBA KK7 citations84
US8648381B2Feb 11, 2014
Semiconductor light emitting device
TOSHIBA KK10 citations84
US7397069B2Jul 8, 2008
Semiconductor device
TOSHIBA KK6 citations73
US9391145B2Jul 12, 2016
Nitride semiconductor element and nitride semiconductor wafer
TOSHIBA KK2 citations63
US9112111B2Aug 18, 2015
Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
TOSHIBA KK2 citations63
US7863637B2Jan 4, 2011
Semiconductor light emitting element, method for manufacturing the same, and light emitting device
TOSHIBA KK2 citations63
US7763907B2Jul 27, 2010
Semiconductor light emitting element
TOSHIBA KK6 citations63
US12501637B2Dec 16, 2025
Nitride semiconductor and semiconductor device
TOSHIBA KK0 citations62
US12170318B2Dec 17, 2024
Nitride semiconductor, semiconductor device, and method for manufacturing nitride semiconductor
TOSHIBA KK0 citations62
US11955520B2Apr 9, 2024
Nitride semiconductor with multiple nitride regions of different impurity concentrations, wafer, semiconductor device and method for manufacturing the same
TOSHIBA KK1 citations62
US11757006B2Sep 12, 2023
Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus of semiconductor device
TOSHIBA KK0 citations62
US11469304B2Oct 11, 2022
Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus of semiconductor device
TOSHIBA KK0 citations62
US7683390B2Mar 23, 2010
Semiconductor device
TOSHIBA KK2 citations62
US12477799B2Nov 18, 2025
Nitride semiconductor and semiconductor device
TOSHIBA KK0 citations52
US12469698B2Nov 11, 2025
Wafer having silicon substrate with suppressed fractures, semiconductor device, and method for manufacturing the wafer
TOSHIBA KK0 citations52
US12266698B2Apr 1, 2025
Nitride semiconductor including multi-portion nitride region
TOSHIBA KK0 citations52
US9679974B2Jun 13, 2017
Nitride semiconductor element, nitride semiconductor wafer, and method for forming nitride semiconductor layer
TOSHIBA KK1 citations52
US9331234B2May 3, 2016
Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
TOSHIBA KK0 citations52
US9263632B2Feb 16, 2016
Semiconductor light emitting device
TOSHIBA KK0 citations52
US9263631B2Feb 16, 2016
Semiconductor light emitting device and method for manufacturing same
TOSHIBA KK0 citations52
US9246055B2Jan 26, 2016
Crystal growth method and semiconductor light emitting device
TOSHIBA KK0 citations52
US9130069B2Sep 8, 2015
Method for manufacturing nitride semiconductor layer and method for manufacturing semiconductor light emitting device
TOSHIBA KK0 citations52
US9093609B2Jul 28, 2015
Semiconductor light emitting device having a p-type semiconductor layer with a p-type impurity
TOSHIBA KK0 citations52
US9035336B2May 19, 2015
Semiconductor device
TOSHIBA KK0 citations52
US9024293B2May 5, 2015
Semiconductor light emitting device
TOSHIBA KK0 citations52
US9006709B2Apr 14, 2015
Semiconductor light emitting element and method for manufacturing the same
TOSHIBA KK0 citations52
US8963176B2Feb 24, 2015
Semiconductor light-emitting device and method for manufacturing same
TOSHIBA KK0 citations52
US8952353B2Feb 10, 2015
Semiconductor light emitting device
TOSHIBA KK0 citations52
US8901595B2Dec 2, 2014
Semiconductor light emitting device
TOSHIBA KK0 citations52
US8835904B2Sep 16, 2014
Semiconductor light emitting device and method for manufacturing same
TOSHIBA KK0 citations52
US8741686B2Jun 3, 2014
Semiconductor device
TOSHIBA KK0 citations52
US8729578B2May 20, 2014
Semiconductor light emitting device and method for manufacturing the same
TOSHIBA KK1 citations52
US8647905B2Feb 11, 2014
Semiconductor light emitting device and method for manufacturing same
TOSHIBA KK0 citations52
US8623683B2Jan 7, 2014
Method of fabricating a nitride semiconductor light emitting device
TOSHIBA KK1 citations52
US8004004B2Aug 23, 2011
Semiconductor light emitting element, method for manufacturing the same, and light emitting device
TOSHIBA KK0 citations52
TACHIBANA KOICHI
6 patentsUS8525203B2Sep 3, 2013
Semiconductor light emitting device
TACHIBANA KOICHI8 citations84
US8564006B2Oct 22, 2013
Nitride semiconductor device and nitride semiconductor layer growth substrate
TACHIBANA KOICHI10 citations83
US8674338B2Mar 18, 2014
Semiconductor light emitting device
TACHIBANA KOICHI4 citations73
US8835901B2Sep 16, 2014
Semiconductor light emitting device
TACHIBANA KOICHI0 citations52
US8698192B2Apr 15, 2014
Semiconductor light emitting device having a p-type semiconductor layer with a p-type impurity
TACHIBANA KOICHI0 citations52
US8835950B2Sep 16, 2014
Semiconductor device
TACHIBANA KOICHI0 citations51
NAGO HAJIME
3 patentsKIMURA SHIGEYA
2 patentsHARADA YOSHIYUKI
1 patentGOTODA TORU
1 patentHIKOSAKA TOSHIKI
1 patentNUFLARE TECHNOLOGY INC
1 patentShowing the top 50 of 59 patents by PatentIndex Score.