P

Inventor

NIUYA TAKAYUKI

US25 patents
⚠️ This page may combine multiple inventors who share the name “NIUYA TAKAYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TEXAS INSTRUMENTS INC

18 patents
US6277720B1Aug 21, 2001

Silicon nitride dopant diffusion barrier in integrated circuits

TEXAS INSTRUMENTS INC70 citations95
US6066545AMay 23, 2000

Birdsbeak encroachment using combination of wet and dry etch for isolation nitride

TEXAS INSTRUMENTS INC247 citations94
US5914279AJun 22, 1999

Silicon nitride sidewall and top surface layer separating conductors

TEXAS INSTRUMENTS INC19 citations92
US5563433AOct 8, 1996

French-type semiconductor memory device with enhanced trench capacitor-transistor connection

TEXAS INSTRUMENTS INC22 citations92
US5470778ANov 28, 1995

Method of manufacturing a semiconductor device

TEXAS INSTRUMENTS INC15 citations82
US6268246B1Jul 31, 2001

Method for fabricating a memory cell

TEXAS INSTRUMENTS INC16 citations79
US6617211B1Sep 9, 2003

Method for forming a memory integrated circuit

TEXAS INSTRUMENTS INC7 citations74
US6127214AOct 3, 2000

Contact gate structure and method

TEXAS INSTRUMENTS INC10 citations74
US5861649AJan 19, 1999

Trench-type semiconductor memory device

TEXAS INSTRUMENTS INC9 citations74
US5804478ASep 8, 1998

Method of forming a trench-type semiconductor memory device

TEXAS INSTRUMENTS INC6 citations74
US5470777ANov 28, 1995

Method of fabricating random access memory device having sidewall insulating layer on the laminate structure

TEXAS INSTRUMENTS INC7 citations74
US5210446AMay 11, 1993

Substrate potential generating circuit employing Schottky diodes

TEXAS INSTRUMENTS INC7 citations74
US5317177AMay 31, 1994

Semiconductor device and method of manufacturing the same

TEXAS INSTRUMENTS INC8 citations73
US6835672B1Dec 28, 2004

Selective oxidation for semiconductor device fabrication

TEXAS INSTRUMENTS INC11 citations68
US5675533AOct 7, 1997

Semiconductor device

TEXAS INSTRUMENTS INC13 citations66
US6946701B2Sep 20, 2005

Method for forming a memory integrated circuit with bitlines over gates and capacitors over bitlines

TEXAS INSTRUMENTS INC2 citations63
US6214658B1Apr 10, 2001

Self-aligned contact structure and method

TEXAS INSTRUMENTS INC6 citations63
US6468876B2Oct 22, 2002

Simple stack cell capacitor formation

TEXAS INSTRUMENTS INC2 citations58

TOKYO ELECTRON LTD

6 patents

MITSUBISHI GAS CHEMICALS CO IN

1 patent