Inventor

DILL FREDERICK HAYES

US13 patents

⚠️ This page may combine multiple inventors who share the name “DILL FREDERICK HAYES”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HITACHI GLOBAL STORAGE TECH

9 patents

US6819527B1Nov 16, 2004

Magnetic head with lower coil traces connected to integrally formed vertical interconnects and upper coil traces through plural insulating layer arrangement

HITACHI GLOBAL STORAGE TECH17 citations92

US7248434B2Jul 24, 2007

Planarized perpendicular pole tip system and method for manufacturing the same

HITACHI GLOBAL STORAGE TECH13 citations84

US7094130B2Aug 22, 2006

Method for fabricating a magnetic transducer using a slurry with spherical particles for CMP-assisted photoresist lift-off

HITACHI GLOBAL STORAGE TECH18 citations84

US7116516B2Oct 3, 2006

Magnetic head having write head with helical coil and method for fabrication thereof

HITACHI GLOBAL STORAGE TECH10 citations74

US7237321B2Jul 3, 2007

Method for fabricating a CPP magnetic transducer using CMP-assisted lift-off and a CMP-resistant metal layer

HITACHI GLOBAL STORAGE TECH7 citations73

US7291279B2Nov 6, 2007

Method of making a read sensor while protecting it from electrostatic discharge (ESD) damage

HITACHI GLOBAL STORAGE TECH6 citations62

US7323112B2Jan 29, 2008

Method of fabricating electronic component using resist structure with no undercut

HITACHI GLOBAL STORAGE TECH2 citations59

US7497008B2Mar 3, 2009

Method of fabricating a thin film magnetic sensor on a wafer

HITACHI GLOBAL STORAGE TECH0 citations52

US6977800B2Dec 20, 2005

Magnetic read head with dual layer lead

HITACHI GLOBAL STORAGE TECH1 citations52

IBM

4 patents

US6023395AFeb 8, 2000

Magnetic tunnel junction magnetoresistive sensor with in-stack biasing

IBM235 citations99

US5898548AApr 27, 1999

Shielded magnetic tunnel junction magnetoresistive read head

IBM190 citations99

US6114719ASep 5, 2000

Magnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cell

IBM213 citations97

US6179207B1Jan 30, 2001

Method for writing single width bar codes on semiconductors wafers

IBM18 citations88