Inventor
WANN HSINGJEN
US11 patents
⚠️ This page may combine multiple inventors who share the name “WANN HSINGJEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
5 patentsUS6093947AJul 25, 2000
Recessed-gate MOSFET with out-diffused source/drain extension
IBM80 citations95
US7452784B2Nov 18, 2008
Formation of improved SOI substrates using bulk semiconductor wafers
IBM11 citations84
US6876040B1Apr 5, 2005
Dense SRAM cells with selective SOI
IBM8 citations73
US6063699AMay 16, 2000
Methods for making high-aspect ratio holes in semiconductor and its application to a gate damascene process for sub- 0.05 micron mosfets
IBM15 citations73
US7932158B2Apr 26, 2011
Formation of improved SOI substrates using bulk semiconductor wafers
IBM0 citations52
TAIWAN SEMICONDUCTOR MFG CO LTD
2 patentsUS10964817B2Mar 30, 2021
(110) surface orientation for reducing fermi-level-pinning between high-K dielectric and group III-V compound semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10770588B2Sep 8, 2020
(110) surface orientation for reducing fermi-level-pinning between high-K dielectric and group III-V compound semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52