Inventor

JUNG JONG WAN

KR11 patents

⚠️ This page may combine multiple inventors who share the name “JUNG JONG WAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

5 patents

US7518172B2Apr 14, 2009

Image sensor having improved sensitivity and decreased crosstalk and method of fabricating same

SAMSUNG ELECTRONICS CO LTD52 citations97

US7825438B2Nov 2, 2010

CMOS image sensor having drive transistor with increased gate surface area and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD15 citations83

US7579637B2Aug 25, 2009

Image sensing device for reducing pixel-to-pixel crosstalk

SAMSUNG ELECTRONICS CO LTD10 citations83

US7514733B2Apr 7, 2009

CMOS image device and local impurity region and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations51

US7601580B2Oct 13, 2009

Image sensor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations40

LG SEMICON CO LTD

2 patents

US6204105B1Mar 20, 2001

Method for fabricating a polycide semiconductor device

LG SEMICON CO LTD66 citations94

US5985744ANov 16, 1999

Forming a silicide in predetermined areas of a semiconductor device

LG SEMICON CO LTD6 citations61

HYUNDAI ELECTRONICS IND

2 patents

US6479357B1Nov 12, 2002

Method for fabricating semiconductor device with copper gate electrode

HYUNDAI ELECTRONICS IND11 citations72

US6498085B2Dec 24, 2002

Semiconductor device and method of fabricating the same

HYUNDAI ELECTRONICS IND12 citations71

HYNIX SEMICONDUCTOR INC

1 patent

US6914311B2Jul 5, 2005

Semiconductor device having doped gate electrode

HYNIX SEMICONDUCTOR INC3 citations60

LEE SEOK-HA

1 patent

US8174057B2May 8, 2012

CMOS image device with local impurity region

LEE SEOK-HA2 citations55