Inventor
KATO HISAYUKI
JP28 patents
⚠️ This page may combine multiple inventors who share the name “KATO HISAYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
12 patentsUS6579754B2Jun 17, 2003
Semiconductor memory device having ferroelectric film and manufacturing method thereof
HITACHI LTD15 citations92
US6239457B1May 29, 2001
Semiconductor memory device and manufacturing method thereof
HITACHI LTD28 citations92
US5670793ASep 23, 1997
Semiconductor device having a polycrystalline silicon film with crystal grains having a uniform orientation
HITACHI LTD22 citations92
US6623986B2Sep 23, 2003
Method of manufacturing a ferroelectric memory device
HITACHI LTD9 citations74
US6316798B1Nov 13, 2001
Ferroelectric memory device and method for manufacturing the same
HITACHI LTD6 citations74
US6326216B1Dec 4, 2001
Process for producing semiconductor integrated circuit device
HITACHI LTD13 citations73
US6445025B2Sep 3, 2002
Semiconductor memory device and manufacturing method thereof
HITACHI LTD2 citations63
US6204155B1Mar 20, 2001
Semiconductor device and production thereof
HITACHI LTD2 citations62
US6187100B1Feb 13, 2001
Semiconductor device and production thereof
HITACHI LTD1 citations62
US6080611AJun 27, 2000
Semiconductor device and production thereof
HITACHI LTD2 citations62
US6906365B2Jun 14, 2005
Ferroelectric memory device including an upper protection electrode
HITACHI LTD0 citations52
US6559037B2May 6, 2003
Process for producing semiconductor device having crystallized film formed from deposited amorphous film
HITACHI LTD0 citations51
SONY CORP
5 patentsUS5427875AJun 27, 1995
Non-aqueous electrolyte secondary cell
SONY CORP92 citations96
US6001507ADec 14, 1999
Non-aqueous electrolyte secondary battery
SONY CORP113 citations95
US5053297AOct 1, 1991
Nonaqueous electrolyte secondary battery
SONY CORP115 citations95
US5370710ADec 6, 1994
Nonaqueous electrolyte secondary cell
SONY CORP32 citations92
US6127065AOct 3, 2000
Method of manufacturing cathode active material and nonaqueous electrolyte secondary battery
SONY CORP20 citations88