Inventor
OGI KATSUMI
JP30 patents
⚠️ This page may combine multiple inventors who share the name “OGI KATSUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI MATERIALS CORP
20 patentsUS5833745ANov 10, 1998
Bi-based ferroelectric composition and thin film, method for forming the thin film, and non-volatile memory
MITSUBISHI MATERIALS CORP23 citations92
US5696384ADec 9, 1997
Composition for formation of electrode pattern
MITSUBISHI MATERIALS CORP46 citations92
US5630872AMay 20, 1997
Formation of thin-film patterns of a metal oxide
MITSUBISHI MATERIALS CORP37 citations92
US5605723AFeb 25, 1997
Method for forming a pattern of non-volatile ferroelectric thin film memory
MITSUBISHI MATERIALS CORP20 citations92
US5767302AJun 16, 1998
High-purity TI complexes, methods for producing the same and BST film-forming liquid compositions
MITSUBISHI MATERIALS CORP24 citations91
US5453294ASep 26, 1995
Method of controlling crystal orientation of PZT and PLZT thin films on platinum substrates
MITSUBISHI MATERIALS CORP30 citations90
US5637440AJun 10, 1997
Composition for forming metal oxide thin film pattern and method for forming metal oxide thin film pattern
MITSUBISHI MATERIALS CORP15 citations81
US5244742ASep 14, 1993
Ultrahigh-purity ferroelectric thin film
MITSUBISHI MATERIALS CORP15 citations74
US6310228B1Oct 30, 2001
Organic copper compound, liquid mixture containing the compound, and copper thin-film prepared using the solution
MITSUBISHI MATERIALS CORP6 citations73
US5807495ASep 15, 1998
Bi-based dielectric thin films, and compositions and method for forming them
MITSUBISHI MATERIALS CORP6 citations73
US5824456AOct 20, 1998
Composition for forming metal oxide thin film pattern and method for forming metal oxide thin film pattern
MITSUBISHI MATERIALS CORP11 citations72
US6855751B2Feb 15, 2005
Silica powder and method for producing the same
MITSUBISHI MATERIALS CORP5 citations71
US6569922B2May 27, 2003
Silica powder and method for producing the same
MITSUBISHI MATERIALS CORP7 citations71
US6280518B1Aug 28, 2001
Organic titanium compound suitable for MOCVD
MITSUBISHI MATERIALS CORP9 citations71
US6987197B2Jan 17, 2006
Organozirconium composite and method of synthesizing the same, raw material solution containing the same, and method of forming lead zirconate titanate thin film
MITSUBISHI MATERIALS CORP2 citations60
US6521770B2Feb 18, 2003
Organozirconium compound, organic solution comprising same, and zirconium-containing thin film therefrom
MITSUBISHI MATERIALS CORP4 citations60
US6485554B1Nov 26, 2002
Solution raw material for forming composite oxide type dielectric thin film and dielectric thin film
MITSUBISHI MATERIALS CORP5 citations60
US6355097B2Mar 12, 2002
Organic titanium compound suitable for MOCVD
MITSUBISHI MATERIALS CORP3 citations60
US5786025AJul 28, 1998
Ba and/or Sr titanate films by organic chemical vapor deposition
MITSUBISHI MATERIALS CORP5 citations57
US7045645B2May 16, 2006
Ruthenium compounds, process for their preparation, and ruthenium-containing thin films made by using the compounds
MITSUBISHI MATERIALS CORP1 citations49
SYMETRIX CORP
6 patentsUS6051858AApr 18, 2000
Ferroelectric/high dielectric constant integrated circuit and method of fabricating same
SYMETRIX CORP125 citations98
US6022669AFeb 8, 2000
Method of fabricating an integrated circuit using self-patterned thin films
SYMETRIX CORP25 citations92
US5942376AAug 24, 1999
Shelf-stable liquid metal arylketone alcoholate solutions and use thereof in photoinitiated patterning of thin films
SYMETRIX CORP34 citations92
US5849465ADec 15, 1998
Photosensitive titanium carboxydiketonate and titanium carboxyketoester precursor solutions and method of patterning integrated circuits using the same
SYMETRIX CORP22 citations92
US5792592AAug 11, 1998
Photosensitive liquid precursor solutions and use thereof in making thin films
SYMETRIX CORP19 citations84
US5788757AAug 4, 1998
Composition and process using ester solvents for fabricating metal oxide films and electronic devices including the same
SYMETRIX CORP6 citations73
MITSUBISHI METAL CORP
3 patentsUS4447045AMay 8, 1984
Apparatus for preparing high-melting-point high-toughness metals
MITSUBISHI METAL CORP19 citations79
US4508322AApr 2, 1985
Apparatus for preparing high melting point high toughness metals
MITSUBISHI METAL CORP15 citations72
US4512557AApr 23, 1985
Apparatus for preparing high-melting-point high-toughness metals
MITSUBISHI METAL CORP10 citations70