P

Inventor

OGI KATSUMI

JP30 patents
⚠️ This page may combine multiple inventors who share the name “OGI KATSUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI MATERIALS CORP

20 patents
US5833745ANov 10, 1998

Bi-based ferroelectric composition and thin film, method for forming the thin film, and non-volatile memory

MITSUBISHI MATERIALS CORP23 citations92
US5696384ADec 9, 1997

Composition for formation of electrode pattern

MITSUBISHI MATERIALS CORP46 citations92
US5630872AMay 20, 1997

Formation of thin-film patterns of a metal oxide

MITSUBISHI MATERIALS CORP37 citations92
US5605723AFeb 25, 1997

Method for forming a pattern of non-volatile ferroelectric thin film memory

MITSUBISHI MATERIALS CORP20 citations92
US5767302AJun 16, 1998

High-purity TI complexes, methods for producing the same and BST film-forming liquid compositions

MITSUBISHI MATERIALS CORP24 citations91
US5453294ASep 26, 1995

Method of controlling crystal orientation of PZT and PLZT thin films on platinum substrates

MITSUBISHI MATERIALS CORP30 citations90
US5637440AJun 10, 1997

Composition for forming metal oxide thin film pattern and method for forming metal oxide thin film pattern

MITSUBISHI MATERIALS CORP15 citations81
US5244742ASep 14, 1993

Ultrahigh-purity ferroelectric thin film

MITSUBISHI MATERIALS CORP15 citations74
US6310228B1Oct 30, 2001

Organic copper compound, liquid mixture containing the compound, and copper thin-film prepared using the solution

MITSUBISHI MATERIALS CORP6 citations73
US5807495ASep 15, 1998

Bi-based dielectric thin films, and compositions and method for forming them

MITSUBISHI MATERIALS CORP6 citations73
US5824456AOct 20, 1998

Composition for forming metal oxide thin film pattern and method for forming metal oxide thin film pattern

MITSUBISHI MATERIALS CORP11 citations72
US6855751B2Feb 15, 2005

Silica powder and method for producing the same

MITSUBISHI MATERIALS CORP5 citations71
US6569922B2May 27, 2003

Silica powder and method for producing the same

MITSUBISHI MATERIALS CORP7 citations71
US6280518B1Aug 28, 2001

Organic titanium compound suitable for MOCVD

MITSUBISHI MATERIALS CORP9 citations71
US6987197B2Jan 17, 2006

Organozirconium composite and method of synthesizing the same, raw material solution containing the same, and method of forming lead zirconate titanate thin film

MITSUBISHI MATERIALS CORP2 citations60
US6521770B2Feb 18, 2003

Organozirconium compound, organic solution comprising same, and zirconium-containing thin film therefrom

MITSUBISHI MATERIALS CORP4 citations60
US6485554B1Nov 26, 2002

Solution raw material for forming composite oxide type dielectric thin film and dielectric thin film

MITSUBISHI MATERIALS CORP5 citations60
US6355097B2Mar 12, 2002

Organic titanium compound suitable for MOCVD

MITSUBISHI MATERIALS CORP3 citations60
US5786025AJul 28, 1998

Ba and/or Sr titanate films by organic chemical vapor deposition

MITSUBISHI MATERIALS CORP5 citations57
US7045645B2May 16, 2006

Ruthenium compounds, process for their preparation, and ruthenium-containing thin films made by using the compounds

MITSUBISHI MATERIALS CORP1 citations49

SYMETRIX CORP

6 patents

MITSUBISHI METAL CORP

3 patents

RAMTRON INT CORP

1 patent