Inventor
PAE SANGWOO
US17 patents
⚠️ This page may combine multiple inventors who share the name “PAE SANGWOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
7 patentsUS7381608B2Jun 3, 2008
Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrode
INTEL CORP85 citations98
US7074680B2Jul 11, 2006
Method for making a semiconductor device having a high-k gate dielectric
INTEL CORP64 citations97
US7084038B2Aug 1, 2006
Method for making a semiconductor device having a high-k gate dielectric
INTEL CORP13 citations92
US7531404B2May 12, 2009
Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer
INTEL CORP16 citations83
US7709909B2May 4, 2010
Method for making a semiconductor device having a high-k gate dielectric
INTEL CORP1 citations62
US7442983B2Oct 28, 2008
Method for making a semiconductor device having a high-k gate dielectric
INTEL CORP2 citations62
US7755140B2Jul 13, 2010
Process charging and electrostatic damage protection in silicon-on-insulator technology
INTEL CORP2 citations61
SAMSUNG ELECTRONICS CO LTD
7 patentsUS11637065B2Apr 25, 2023
Semiconductor device including via and wiring
SAMSUNG ELECTRONICS CO LTD0 citations55
US11239162B2Feb 1, 2022
Semiconductor device including via and wiring
SAMSUNG ELECTRONICS CO LTD0 citations55
US11735491B2Aug 22, 2023
Semiconductor package device
SAMSUNG ELECTRONICS CO LTD0 citations50
US11961824B2Apr 16, 2024
Semiconductor package including stacked chip structure
SAMSUNG ELECTRONICS CO LTD1 citations49
US12568822B2Mar 3, 2026
Semiconductor module including a clip structure
SAMSUNG ELECTRONICS CO LTD0 citations45
US12501608B2Dec 16, 2025
Semiconductor device having different extending active layers
SAMSUNG ELECTRONICS CO LTD0 citations45
US10048137B2Aug 14, 2018
Semiconductor devices including electrodes for temperature measurement
SAMSUNG ELECTRONICS CO LTD1 citations43