Inventor
SEO SUNG-MIN
KR26 patents
⚠️ This page may combine multiple inventors who share the name “SEO SUNG-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
18 patentsUS7038972B2May 2, 2006
Double data rate synchronous dynamic random access memory semiconductor device
SAMSUNG ELECTRONICS CO LTD18 citations84
US6879533B2Apr 12, 2005
Integrated circuit memory devices including active load circuits and related methods
SAMSUNG ELECTRONICS CO LTD12 citations83
US6795372B2Sep 21, 2004
Bit line sense amplifier driving control circuits and methods for synchronous drams that selectively supply and suspend supply of operating voltages
SAMSUNG ELECTRONICS CO LTD15 citations83
US7184347B2Feb 27, 2007
Semiconductor memory devices having separate read and write global data lines
SAMSUNG ELECTRONICS CO LTD9 citations74
US9343175B2May 17, 2016
Fuse data reading circuit having multiple reading modes and related devices, systems and methods
SAMSUNG ELECTRONICS CO LTD3 citations72
US7123520B2Oct 17, 2006
Buffer circuit and memory system for selectively outputting data strobe signal according to number of data bits
SAMSUNG ELECTRONICS CO LTD8 citations72
US7317645B2Jan 8, 2008
Redundancy repair circuit and a redundancy repair method therefor
SAMSUNG ELECTRONICS CO LTD6 citations63
US9214244B2Dec 15, 2015
Method of reading data stored in fuse device and apparatuses using the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US8897055B2Nov 25, 2014
Memory device, method of operating the same, and electronic device having the memory device
SAMSUNG ELECTRONICS CO LTD2 citations62
US6815989B2Nov 9, 2004
Sequential activation delay line circuits and methods
SAMSUNG ELECTRONICS CO LTD3 citations62
US9858981B2Jan 2, 2018
Semiconductor memory devices including redundancy memory cells
SAMSUNG ELECTRONICS CO LTD0 citations51
US9524770B2Dec 20, 2016
Semiconductor memory devices including redundancy memory cells
SAMSUNG ELECTRONICS CO LTD0 citations51
US9293218B2Mar 22, 2016
Semiconductor memory device having OTP cell array
SAMSUNG ELECTRONICS CO LTD1 citations51
US9165673B2Oct 20, 2015
Semiconductor memory device including sensing verification unit
SAMSUNG ELECTRONICS CO LTD0 citations51
US9123407B2Sep 1, 2015
Devices and methods for deciding data read start
SAMSUNG ELECTRONICS CO LTD1 citations51
US7269078B2Sep 11, 2007
Buffer circuit and memory system for selectively outputting data strobe signal according to number of data bits
SAMSUNG ELECTRONICS CO LTD0 citations51
US7106653B2Sep 12, 2006
Semiconductor memory device and data read method of the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US6777987B2Aug 17, 2004
Signal buffer for high-speed signal transmission and signal line driving circuit including the same
SAMSUNG ELECTRONICS CO LTD1 citations51