Inventor

TAKAHASHI KUNIMASA

JP49 patents

⚠️ This page may combine multiple inventors who share the name “TAKAHASHI KUNIMASA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAKAHASHI KUNIMASA

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Semiconductor device

Method for growing semiconductor film and method for fabricating semiconductor device

Method for making insulated-gate semiconductor element

Semiconductor device having an active region of alternating layers

Semiconductor device with a plurality of semiconductor elements each including a wide band-gap semiconductor

Semiconductor substrate, semiconductor device and method for fabricating the same

Misfet

Semiconductor device having an active region of alternating layers

Semiconductor power device for high-temperature applications

Equipment for communication system

Misfet

Silicon carbide substrate, and method for producing the substrate, and semiconductor device utilizing the substrate

Silicon carbide semiconductor device and method for fabricating the same

Equipment for communication system and semiconductor integrated circuit device

SiC-MISFET and method for fabricating the same

Semiconductor device and method for fabricating the same

Field effect transistor and method of manufacturing the same

Semiconductor device with silicon carbide suppression layer for preventing extension of micropipe

Device for implementing an inverter having a reduced size

High-breakdown-voltage insulated gate semiconductor device

High-breakdown-voltage insulated gate semiconductor device

Semiconductor device and method for manufacturing the same

PANASONIC CORP

Semiconductor device and method for manufacturing same

Semiconductor device and method for fabricating the same

Semiconductor apparatus including power semiconductor device constructed by using wide band gap semiconductor

Silicon carbide-oxide layered structure, production method thereof, and semiconductor device

Wide gap semiconductor power device with temperature independent resistivity due to channel region resistivity having negative temperature dependence

Method for manufacturing silicon carbide semiconductor element

Silicon carbide semiconductor device and process for producing the same

Nitride semiconductor light-emitting element and light source including the nitride semiconductor light-emitting element

Silicon carbide semiconductor element

Semiconductor device and production method therefor

Method for manufacturing semiconductor device

Nitride semiconductor light-emitting element including Si-doped layer, and light source

Semiconductor device and method for fabricating the same

MITSUBISHI PETROCHEMICAL CO

Graphitic or carbonaceous moldings and processes for producing the same

Production of carbonaceous powders and their granulation

Process for producing mesophase pitch

Process for producing biphenyl derivatives

Process for producing alkenyl-substituted aromatic compounds and catalyst therefor

Process for producing mesophase pitch

Process for preparing alkyl-substituted aromatic compounds

TAKAHASHI KUNIMASA

Silicon carbide semiconductor element

Semiconductor element and manufacturing method therefor

NUVOTON TECHNOLOGY CORP JAPAN

Semiconductor light-emitting element and method of fabricating semiconductor light-emitting element

Semiconductor light-emitting device

KIYOSAWA TSUTOMU

Silicon carbide semiconductor element and method for fabricating the same

PANASONIC SEMICONDUCTOR SOLUTIONS CO LTD

Semiconductor light emitting element

HAYASHI MASASHI

Semiconductor chip and process for production thereof