Inventor
PURAYATH VINOD
US21 patents
⚠️ This page may combine multiple inventors who share the name “PURAYATH VINOD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUNRISE MEMORY CORP
11 patentsUS11839086B2Dec 5, 2023
3-dimensional memory string array of thin-film ferroelectric transistors
SUNRISE MEMORY CORP5 citations75
US11844204B2Dec 12, 2023
Process for preparing a channel region of a thin-film transistor in a 3-dimensional thin-film transistor array
SUNRISE MEMORY CORP3 citations73
US11515309B2Nov 29, 2022
Process for preparing a channel region of a thin-film transistor in a 3-dimensional thin-film transistor array
SUNRISE MEMORY CORP2 citations73
US11917821B2Feb 27, 2024
Process for a 3-dimensional array of horizontal nor-type memory strings
SUNRISE MEMORY CORP2 citations72
US11217600B2Jan 4, 2022
Process for a 3-dimensional array of horizontal NOR-type memory strings
SUNRISE MEMORY CORP2 citations72
US12160996B2Dec 3, 2024
Three-dimensional memory string array of thin-film ferroelectric transistors
SUNRISE MEMORY CORP0 citations62
US12550382B2Feb 10, 2026
Thin-film storage transistor with ferroelectric storage layer
SUNRISE MEMORY CORP0 citations52
US12477725B2Nov 18, 2025
Methods for fabricating a 3-dimensional memory structure of nor memory strings
SUNRISE MEMORY CORP0 citations52
US12315565B2May 27, 2025
Three-dimensional memory structure fabricated using repeated active stack sections
SUNRISE MEMORY CORP0 citations49
US12205645B2Jan 21, 2025
Three-dimensional memory structure fabrication using channel replacement
SUNRISE MEMORY CORP0 citations47
US11751391B2Sep 5, 2023
Methods for fabricating a 3-dimensional memory structure of nor memory strings
SUNRISE MEMORY CORP0 citations44
SANDISK TECHNOLOGIES INC
9 patentsUS8928061B2Jan 6, 2015
Three dimensional NAND device with silicide containing floating gates
SANDISK TECHNOLOGIES INC72 citations98
US9165940B2Oct 20, 2015
Three dimensional NAND device with silicide containing floating gates and method of making thereof
SANDISK TECHNOLOGIES INC36 citations94
US8823075B2Sep 2, 2014
Select gate formation for nanodot flat cell
SANDISK TECHNOLOGIES INC21 citations92
US8969153B2Mar 3, 2015
NAND string containing self-aligned control gate sidewall cladding
SANDISK TECHNOLOGIES INC14 citations84
US9029936B2May 12, 2015
Non-volatile memory structure containing nanodots and continuous metal layer charge traps and method of making thereof
SANDISK TECHNOLOGIES INC4 citations73
US8987802B2Mar 24, 2015
Method for using nanoparticles to make uniform discrete floating gate layer
SANDISK TECHNOLOGIES INC4 citations73
US8822288B2Sep 2, 2014
NAND memory device containing nanodots and method of making thereof
SANDISK TECHNOLOGIES INC4 citations73
US9552991B2Jan 24, 2017
Trench vertical NAND and method of making thereof
SANDISK TECHNOLOGIES INC2 citations72
US9230971B2Jan 5, 2016
NAND string containing self-aligned control gate sidewall cladding
SANDISK TECHNOLOGIES INC0 citations52