Inventor

LIN SHANG-WEI

TW5 patents

⚠️ This page may combine multiple inventors who share the name “LIN SHANG-WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MACRONIX INT CO LTD

2 patents

US7889556B2Feb 15, 2011

Flash memory having insulating liners between source/drain lines and channels

MACRONIX INT CO LTD7 citations82

US7668010B2Feb 23, 2010

Flash memory having insulating liners between source/drain lines and channels

MACRONIX INT CO LTD7 citations72

HUANG YU-FONG

1 patent

US8836004B2Sep 16, 2014

Memory device

HUANG YU-FONG5 citations66

TAIWAN SEMICONDUCTOR MFG

1 patent

US7279428B2Oct 9, 2007

Method of preventing photoresist residues

TAIWAN SEMICONDUCTOR MFG4 citations60

KU SHAW-HUNG

1 patent

US8466508B2Jun 18, 2013

Non-volatile memory structure including stress material between stacked patterns

KU SHAW-HUNG1 citations48