Inventor
OH BANG WON
KR23 patents
⚠️ This page may combine multiple inventors who share the name “OH BANG WON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRO MECH
14 patentsUS7531841B2May 12, 2009
Nitride-based semiconductor light emitting device
SAMSUNG ELECTRO MECH38 citations92
US7436001B2Oct 14, 2008
Vertical GaN-based LED and method of manufacturing the same
SAMSUNG ELECTRO MECH35 citations92
US7151045B2Dec 19, 2006
Method for separating sapphire wafer into chips using dry-etching
SAMSUNG ELECTRO MECH13 citations84
US6236102B1May 22, 2001
Chip type thin film capacitor, and manufacturing method therefor
SAMSUNG ELECTRO MECH17 citations84
US7462876B2Dec 9, 2008
Nitride semiconductor light emitting device
SAMSUNG ELECTRO MECH13 citations83
US7078256B2Jul 18, 2006
Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof
SAMSUNG ELECTRO MECH12 citations81
US7074652B2Jul 11, 2006
Method for separating sapphire wafer into chips
SAMSUNG ELECTRO MECH18 citations77
US7695989B2Apr 13, 2010
Method of manufacturing vertical gallium-nitride based light emitting diode
SAMSUNG ELECTRO MECH5 citations73
US7573076B2Aug 11, 2009
Vertical gallium-nitride based light emitting diode
SAMSUNG ELECTRO MECH7 citations73
US6774492B2Aug 10, 2004
Chip package assembly having chip package mounted on printed circuit board
SAMSUNG ELECTRO MECH12 citations66
US7119375B2Oct 10, 2006
Light emitting diode and method for manufacturing the same
SAMSUNG ELECTRO MECH2 citations62
US6703677B2Mar 9, 2004
Submount integrated photodiode and laser diode package using the same
SAMSUNG ELECTRO MECH5 citations61
US7553682B2Jun 30, 2009
Method of manufacturing vertical nitride light emitting device
SAMSUNG ELECTRO MECH4 citations56
US7012284B2Mar 14, 2006
Nitride semiconductor light emitting device and method of manufacturing the same
SAMSUNG ELECTRO MECH0 citations52
SAMSUNG LED CO LTD
5 patentsUS7902544B2Mar 8, 2011
Nitride semiconductor light emitting device
SAMSUNG LED CO LTD11 citations83
US8012779B2Sep 6, 2011
Gallium nitride-based light emitting diode and method of manufacturing the same
SAMSUNG LED CO LTD2 citations62
US7906785B2Mar 15, 2011
Vertical type nitride semiconductor light emitting device and method of manufacturing the same
SAMSUNG LED CO LTD3 citations62
US7872276B2Jan 18, 2011
Vertical gallium nitride-based light emitting diode and method of manufacturing the same
SAMSUNG LED CO LTD6 citations62
US7829882B2Nov 9, 2010
Nitride semiconductor light emitting device
SAMSUNG LED CO LTD3 citations62