Inventor
HIROKI AKIRA
JP14 patents
⚠️ This page may combine multiple inventors who share the name “HIROKI AKIRA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
10 patentsUS5512771AApr 30, 1996
MOS type semiconductor device having a low concentration impurity diffusion region
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD65 citations96
US6031268AFeb 29, 2000
Complementary semiconductor device and method for producing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations92
US5830788ANov 3, 1998
Method for forming complementary MOS device having asymmetric region in channel region
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD45 citations92
US5808347ASep 15, 1998
MIS transistor with gate sidewall insulating layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD34 citations92
US5221632AJun 22, 1993
Method of proudcing a MIS transistor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD26 citations92
US5675168AOct 7, 1997
Unsymmetrical MOS device having a gate insulator area offset from the source and drain areas, and ESD protection circuit including such a MOS device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations74
US6031272AFeb 29, 2000
MOS type semiconductor device having an impurity diffusion layer with a nonuniform impurity concentration profile in a channel region
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations73
US5518944AMay 21, 1996
MOS transistor and its fabricating method
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations73
US5386133AJan 31, 1995
LDD FET with polysilicon sidewalls
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations73
US6355963B1Mar 12, 2002
MOS type semiconductor device having an impurity diffusion layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations62