Inventor
TENDULKAR MIHIR
US21 patents
⚠️ This page may combine multiple inventors who share the name “TENDULKAR MIHIR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTERMOLECULAR INC
14 patentsUS8835890B2Sep 16, 2014
ReRAM cells including TaXSiYN embedded resistors
INTERMOLECULAR INC11 citations91
US9231203B1Jan 5, 2016
Doped narrow band gap nitrides for embedded resistors of resistive random access memory cells
INTERMOLECULAR INC14 citations84
US9276210B1Mar 1, 2016
Conductive barriers for ternary nitride thin-film resistors
INTERMOLECULAR INC6 citations72
US9243321B2Jan 26, 2016
Ternary metal nitride formation by annealing constituent layers
INTERMOLECULAR INC6 citations72
US8853661B1Oct 7, 2014
Metal aluminum nitride embedded resistors for resistive random memory access cells
INTERMOLECULAR INC4 citations72
US8860002B2Oct 14, 2014
Limited maximum fields of electrode-switching layer interfaces in Re-RAM cells
INTERMOLECULAR INC2 citations63
US8796103B2Aug 5, 2014
Forming nonvolatile memory elements by diffusing oxygen into electrodes
INTERMOLECULAR INC3 citations63
US8847187B2Sep 30, 2014
Method of forming anneal-resistant embedded resistor for non-volatile memory application
INTERMOLECULAR INC2 citations62
US8969129B2Mar 3, 2015
ReRAM cells including TaXSiYN embedded resistors
INTERMOLECULAR INC1 citations61
US8735864B2May 27, 2014
Nonvolatile memory device using a tunnel nitride as a current limiter element
INTERMOLECULAR INC1 citations52
US9178142B2Nov 3, 2015
Doped electrodes used to inhibit oxygen loss in ReRAM device
INTERMOLECULAR INC1 citations51
US9006696B2Apr 14, 2015
Metal aluminum nitride embedded resistors for resistive random memory access cells
INTERMOLECULAR INC0 citations51
US8981329B1Mar 17, 2015
Method of forming anneal-resistant embedded resistor for non-volatile memory application
INTERMOLECULAR INC0 citations51
US8921154B1Dec 30, 2014
Method of forming anneal-resistant embedded resistor for non-volatile memory application
INTERMOLECULAR INC0 citations51
TENDULKAR MIHIR
5 patentsUS8698119B2Apr 15, 2014
Nonvolatile memory device using a tunnel oxide as a current limiter element
TENDULKAR MIHIR12 citations83
US8686386B2Apr 1, 2014
Nonvolatile memory device using a varistor as a current limiter element
TENDULKAR MIHIR8 citations83
US9299926B2Mar 29, 2016
Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer as a current limiter element
TENDULKAR MIHIR1 citations51
US9030018B2May 12, 2015
Test vehicles for evaluating resistance of thin layers
TENDULKAR MIHIR0 citations51
US8552413B2Oct 8, 2013
Nonvolatile memory device using a tunnel nitride as a current limiter element
TENDULKAR MIHIR1 citations51