Inventor
HASHIM IMRAN
US108 patents
⚠️ This page may combine multiple inventors who share the name “HASHIM IMRAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
19 patentsUS6287977B1Sep 11, 2001
Method and apparatus for forming improved metal interconnects
APPLIED MATERIALS INC161 citations99
US6066892AMay 23, 2000
Copper alloy seed layer for copper metallization in an integrated circuit
APPLIED MATERIALS INC185 citations99
US6037257AMar 14, 2000
Sputter deposition and annealing of copper alloy metallization
APPLIED MATERIALS INC117 citations99
US6436267B1Aug 20, 2002
Method for achieving copper fill of high aspect ratio interconnect features
APPLIED MATERIALS INC105 citations98
US6992012B2Jan 31, 2006
Method and apparatus for forming improved metal interconnects
APPLIED MATERIALS INC35 citations96
US6709987B2Mar 23, 2004
Method and apparatus for forming improved metal interconnects
APPLIED MATERIALS INC55 citations96
US6566259B1May 20, 2003
Integrated deposition process for copper metallization
APPLIED MATERIALS INC41 citations96
US6559061B2May 6, 2003
Method and apparatus for forming improved metal interconnects
APPLIED MATERIALS INC63 citations96
US6500762B2Dec 31, 2002
Method of depositing a copper seed layer which promotes improved feature surface coverage
APPLIED MATERIALS INC56 citations96
US6387805B2May 14, 2002
Copper alloy seed layer for copper metallization
APPLIED MATERIALS INC58 citations96
US6184137B1Feb 6, 2001
Structure and method for improving low temperature copper reflow in semiconductor features
APPLIED MATERIALS INC48 citations96
US6160315ADec 12, 2000
Copper alloy via structure
APPLIED MATERIALS INC73 citations96
US6174811B1Jan 16, 2001
Integrated deposition process for copper metallization
APPLIED MATERIALS INC48 citations94
US6391776B1May 21, 2002
Method of depositing a copper seed layer which promotes improved feature surface coverage
APPLIED MATERIALS INC27 citations93
US6217715B1Apr 17, 2001
Coating of vacuum chambers to reduce pump down time and base pressure
APPLIED MATERIALS INC31 citations92
US6149776ANov 21, 2000
Copper sputtering target
APPLIED MATERIALS INC42 citations92
US7294242B1Nov 13, 2007
Collimated and long throw magnetron sputtering of nickel/iron films for magnetic recording head applications
APPLIED MATERIALS INC13 citations82
US6881673B2Apr 19, 2005
Integrated deposition process for copper metallization
APPLIED MATERIALS INC8 citations74
US6352926B1Mar 5, 2002
Structure for improving low temperature copper reflow in semiconductor features
APPLIED MATERIALS INC13 citations74
INTERMOLECULAR INC
15 patentsUS8686389B1Apr 1, 2014
Diffusion barrier layer for resistive random access memory cells
INTERMOLECULAR INC33 citations98
US8343813B2Jan 1, 2013
Resistive-switching memory elements having improved switching characteristics
INTERMOLECULAR INC30 citations95
US8766234B1Jul 1, 2014
Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
INTERMOLECULAR INC28 citations92
US7824935B2Nov 2, 2010
Methods of combinatorial processing for screening multiple samples on a semiconductor substrate
INTERMOLECULAR INC25 citations92
US9001554B2Apr 7, 2015
Resistive random access memory cell having three or more resistive states
INTERMOLECULAR INC18 citations91
US9281357B2Mar 8, 2016
DRAM MIM capacitor using non-noble electrodes
INTERMOLECULAR INC7 citations84
US9054307B2Jun 9, 2015
Resistive random access memory cells having metal alloy current limiting layers
INTERMOLECULAR INC6 citations84
US8969169B1Mar 3, 2015
DRAM MIM capacitor using non-noble electrodes
INTERMOLECULAR INC13 citations84
US8817524B2Aug 26, 2014
Resistive random access memory cells having metal alloy current limiting layers
INTERMOLECULAR INC11 citations84
US8735217B2May 27, 2014
Multifunctional electrode
INTERMOLECULAR INC4 citations84
US7927947B2Apr 19, 2011
Methods for depositing high-K dielectrics
INTERMOLECULAR INC10 citations84
US9246096B2Jan 26, 2016
Atomic layer deposition of metal oxides for memory applications
INTERMOLECULAR INC3 citations73
US8995172B2Mar 31, 2015
Nonvolatile memory device having a current limiting element
INTERMOLECULAR INC4 citations73
US8871621B2Oct 28, 2014
Method of forming an asymmetric MIMCAP or a schottky device as a selector element for a cross-bar memory array
INTERMOLECULAR INC4 citations73
US7968452B2Jun 28, 2011
Titanium-based high-K dielectric films
INTERMOLECULAR INC6 citations73
WANG YUN
8 patentsUS8288297B1Oct 16, 2012
Atomic layer deposition of metal oxide materials for memory applications
WANG YUN23 citations91
US8866121B2Oct 21, 2014
Current-limiting layer and a current-reducing layer in a memory device
WANG YUN14 citations84
US8787066B2Jul 22, 2014
Method for forming resistive switching memory elements with improved switching behavior
WANG YUN8 citations84
US8681530B2Mar 25, 2014
Nonvolatile memory device having a current limiting element
WANG YUN11 citations84
US8618525B2Dec 31, 2013
Work function tailoring for nonvolatile memory applications
WANG YUN6 citations84
US8466446B2Jun 18, 2013
Atomic layer deposition of metal oxide materials for memory applications
WANG YUN5 citations82
US8878152B2Nov 4, 2014
Nonvolatile resistive memory element with an integrated oxygen isolation structure
WANG YUN4 citations73
US8853099B2Oct 7, 2014
Nonvolatile resistive memory element with a metal nitride containing switching layer
WANG YUN5 citations73
ADVANCED MICRO DEVICES INC
2 patentsHASHIM IMRAN
2 patentsTENDULKAR MIHIR
2 patentsPHAM HIEU
1 patentAPPLE INC
1 patentShowing the top 50 of 108 patents by PatentIndex Score.