Inventor
MINVIELLE TIM
US48 patents
⚠️ This page may combine multiple inventors who share the name “MINVIELLE TIM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTERMOLECULAR INC
27 patentsUS9178000B1Nov 3, 2015
Resistive random access memory cells having shared electrodes with transistor devices
INTERMOLECULAR INC22 citations91
US9001554B2Apr 7, 2015
Resistive random access memory cell having three or more resistive states
INTERMOLECULAR INC18 citations91
US9054307B2Jun 9, 2015
Resistive random access memory cells having metal alloy current limiting layers
INTERMOLECULAR INC6 citations84
US8890109B2Nov 18, 2014
Resistive random access memory access cells having thermally isolating structures
INTERMOLECULAR INC7 citations84
US8852996B2Oct 7, 2014
Carbon doped resistive switching layers
INTERMOLECULAR INC7 citations84
US8817524B2Aug 26, 2014
Resistive random access memory cells having metal alloy current limiting layers
INTERMOLECULAR INC11 citations84
US8809159B2Aug 19, 2014
Radiation enhanced resistive switching layers
INTERMOLECULAR INC8 citations84
US8735217B2May 27, 2014
Multifunctional electrode
INTERMOLECULAR INC4 citations84
US9246096B2Jan 26, 2016
Atomic layer deposition of metal oxides for memory applications
INTERMOLECULAR INC3 citations73
US8995166B2Mar 31, 2015
Multi-level memory array having resistive elements for multi-bit data storage
INTERMOLECULAR INC5 citations73
US8980766B2Mar 17, 2015
Sequential atomic layer deposition of electrodes and resistive switching components
INTERMOLECULAR INC2 citations63
US8906736B1Dec 9, 2014
Multifunctional electrode
INTERMOLECULAR INC1 citations63
US8860002B2Oct 14, 2014
Limited maximum fields of electrode-switching layer interfaces in Re-RAM cells
INTERMOLECULAR INC2 citations63
US8796103B2Aug 5, 2014
Forming nonvolatile memory elements by diffusing oxygen into electrodes
INTERMOLECULAR INC3 citations63
US9343673B2May 17, 2016
Method for forming metal oxides and silicides in a memory device
INTERMOLECULAR INC0 citations52
US9275727B2Mar 1, 2016
Multi-level memory array having resistive elements for multi-bit data storage
INTERMOLECULAR INC1 citations52
US9276203B2Mar 1, 2016
Resistive switching layers including Hf-Al-O
INTERMOLECULAR INC1 citations52
US9087978B1Jul 21, 2015
Transition metal oxide bilayers
INTERMOLECULAR INC0 citations52
US9006026B2Apr 14, 2015
Atomic layer deposition of metal oxides for memory applications
INTERMOLECULAR INC0 citations52
US8987697B2Mar 24, 2015
Transition metal oxide bilayers
INTERMOLECULAR INC0 citations52
US8975727B2Mar 10, 2015
Memory cell having an integrated two-terminal current limiting resistor
INTERMOLECULAR INC1 citations52
US8975114B2Mar 10, 2015
Method for forming metal oxides and silicides in a memory device
INTERMOLECULAR INC0 citations52
US8859328B2Oct 14, 2014
Multifunctional electrode
INTERMOLECULAR INC0 citations52
US8809205B2Aug 19, 2014
Sequential atomic layer deposition of electrodes and resistive switching components
INTERMOLECULAR INC0 citations52
US8735864B2May 27, 2014
Nonvolatile memory device using a tunnel nitride as a current limiter element
INTERMOLECULAR INC1 citations52
US8704203B2Apr 22, 2014
Transition metal oxide bilayers
INTERMOLECULAR INC0 citations52
US9178148B2Nov 3, 2015
Resistive random access memory cell having three or more resistive states
INTERMOLECULAR INC1 citations51
HITACHI GLOBAL STORAGE TECH
7 patentsUS6599642B2Jul 29, 2003
High anisotropy alloy for thin film disk
HITACHI GLOBAL STORAGE TECH9 citations74
US6596409B2Jul 22, 2003
Onset layer for thin film disk with CoPtCrB alloy
HITACHI GLOBAL STORAGE TECH7 citations74
US6593009B2Jul 15, 2003
Magnetic thin film media with a pre-seed layer of CrTi
HITACHI GLOBAL STORAGE TECH11 citations74
US6586116B1Jul 1, 2003
Nonmetallic thin film magnetic recording disk with pre-seed layer
HITACHI GLOBAL STORAGE TECH11 citations74
US6670032B2Dec 30, 2003
Oriented magnetic medium on a nonmetallic substrate
HITACHI GLOBAL STORAGE TECH7 citations73
US6852430B2Feb 8, 2005
Magnetic thin film media with a pre-seed layer of CrTi
HITACHI GLOBAL STORAGE TECH5 citations61
US6803119B2Oct 12, 2004
Oriented magnetic recording media on a nonmetallic substrate
HITACHI GLOBAL STORAGE TECH0 citations51