Inventor
FUJITO KENJI
JP20 patents
⚠️ This page may combine multiple inventors who share the name “FUJITO KENJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI CHEM CORP
15 patentsUS11038024B2Jun 15, 2021
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP4 citations83
US10475887B2Nov 12, 2019
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP5 citations83
US10066319B2Sep 4, 2018
GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device
MITSUBISHI CHEM CORP6 citations82
US11664428B2May 30, 2023
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP1 citations72
US11031475B2Jun 8, 2021
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP3 citations72
US10655244B2May 19, 2020
GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device
MITSUBISHI CHEM CORP2 citations71
US12107129B2Oct 1, 2024
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP0 citations62
US10570530B2Feb 25, 2020
Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals
MITSUBISHI CHEM CORP0 citations51
US10023976B2Jul 17, 2018
Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals
MITSUBISHI CHEM CORP0 citations51
US9840791B2Dec 12, 2017
Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals
MITSUBISHI CHEM CORP0 citations51
US9428386B2Aug 30, 2016
Process for producing a group-III nitride crystal and process for producing a light-emitting semiconductor element or a semiconductor device comprising a group-III nitride crystal
MITSUBISHI CHEM CORP0 citations51
US9112096B2Aug 18, 2015
Method for producing group-III nitride semiconductor crystal, group-III nitride semiconductor substrate, and semiconductor light emitting device
MITSUBISHI CHEM CORP1 citations51
US8022413B2Sep 20, 2011
Group III nitride semiconductor substrate and method for cleaning the same
MITSUBISHI CHEM CORP0 citations49
US7928446B2Apr 19, 2011
Group III nitride semiconductor substrate and method for cleaning the same
MITSUBISHI CHEM CORP1 citations49
US9502241B2Nov 22, 2016
Group III nitride crystal production method and group III nitride crystal
MITSUBISHI CHEM CORP0 citations47
FUJITO KENJI
4 patentsUS8269251B2Sep 18, 2012
Method for producing group III nitride semiconductor crystal, group III nitride semiconductor substrate, and semiconductor light-emitting device
FUJITO KENJI7 citations81
US8728622B2May 20, 2014
Single-crystal substrate, group-III nitride crystal obtained using the same, and process for producing group-III nitride crystal
FUJITO KENJI2 citations60
US8709371B2Apr 29, 2014
Method for growing group III-nitride crystals in supercritical ammonia using an autoclave
FUJITO KENJI0 citations51
US8545626B2Oct 1, 2013
Nitride semiconductor crystal and its production method
FUJITO KENJI0 citations33