Inventor
NAGAO SATORU
JP29 patents
⚠️ This page may combine multiple inventors who share the name “NAGAO SATORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI CHEM CORP
22 patentsUS6265733B1Jul 24, 2001
Semiconductor device and method for manufacturing the same
MITSUBISHI CHEM CORP15 citations92
US6172998B1Jan 9, 2001
Semiconductor laser diode
MITSUBISHI CHEM CORP20 citations92
US5838028ANov 17, 1998
Semiconductor device having a ridge or groove
MITSUBISHI CHEM CORP25 citations92
US11038024B2Jun 15, 2021
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP4 citations83
US10475887B2Nov 12, 2019
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP5 citations83
US10066319B2Sep 4, 2018
GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device
MITSUBISHI CHEM CORP6 citations82
US5566198AOct 15, 1996
Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode
MITSUBISHI CHEM CORP13 citations73
US11664428B2May 30, 2023
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP1 citations72
US11031475B2Jun 8, 2021
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP3 citations72
US10655244B2May 19, 2020
GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device
MITSUBISHI CHEM CORP2 citations71
US6639926B1Oct 28, 2003
Semiconductor light-emitting device
MITSUBISHI CHEM CORP5 citations63
US6023483AFeb 8, 2000
Semiconductor light-emitting device
MITSUBISHI CHEM CORP2 citations63
US12107129B2Oct 1, 2024
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP0 citations62
US6744066B2Jun 1, 2004
Semiconductor device and method for manufacturing the same
MITSUBISHI CHEM CORP3 citations62
US6589807B2Jul 8, 2003
Semiconductor device and method for manufacturing the same
MITSUBISHI CHEM CORP1 citations62
US5608751AMar 4, 1997
Laser diode and process for producing the same
MITSUBISHI CHEM CORP2 citations62
US7102174B2Sep 5, 2006
Light emitting device and light emitting device module
MITSUBISHI CHEM CORP4 citations59
US10570530B2Feb 25, 2020
Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals
MITSUBISHI CHEM CORP0 citations51
US10023976B2Jul 17, 2018
Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals
MITSUBISHI CHEM CORP0 citations51
US9840791B2Dec 12, 2017
Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals
MITSUBISHI CHEM CORP0 citations51
US7164157B2Jan 16, 2007
Light emitting device and light emitting device module
MITSUBISHI CHEM CORP0 citations49
US9502241B2Nov 22, 2016
Group III nitride crystal production method and group III nitride crystal
MITSUBISHI CHEM CORP0 citations47
JAPAN SCIENCE & TECH AGENCY
3 patentsUS7902089B2Mar 8, 2011
N-type transistor, production methods for n-type transistor and n-type transistor-use channel, and production method of nanotube structure exhibiting n-type semiconductor-like characteristics
JAPAN SCIENCE & TECH AGENCY17 citations92
US9506892B2Nov 29, 2016
Field-effect transistor, single-electron transistor and sensor using the same
JAPAN SCIENCE & TECH AGENCY1 citations62
US8008650B2Aug 30, 2011
Transistor with nanotube structure exhibiting N-type semiconductor-like characteristics
JAPAN SCIENCE & TECH AGENCY0 citations51
MATSUMOTO KAZUHIKO
3 patentsUS8502277B2Aug 6, 2013
Field-effect transistor, single-electron transistor and sensor using the same
MATSUMOTO KAZUHIKO15 citations91
US8772099B2Jul 8, 2014
Method of use of a field-effect transistor, single-electron transistor and sensor
MATSUMOTO KAZUHIKO0 citations51
US8766326B2Jul 1, 2014
Field-effect transistor, single-electron transistor and sensor
MATSUMOTO KAZUHIKO0 citations51