Inventor
YANG JIAQI
US18 patents
⚠️ This page may combine multiple inventors who share the name “YANG JIAQI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SCHLUMBERGER TECHNOLOGY CORP
9 patentsUS10138727B2Nov 27, 2018
Acoustic multi-modality inversion for cement integrity analysis
SCHLUMBERGER TECHNOLOGY CORP20 citations85
US10012749B2Jul 3, 2018
Fast model based inversion of acoustic impedance of annulus behind casing
SCHLUMBERGER TECHNOLOGY CORP9 citations84
US9829597B2Nov 28, 2017
Model based inversion of acoustic impedance of annulus behind casing
SCHLUMBERGER TECHNOLOGY CORP16 citations84
US9784875B2Oct 10, 2017
Method to estimate cement acoustic wave speeds from data acquired by a cased hole ultrasonic cement evaluation tool
SCHLUMBERGER TECHNOLOGY CORP10 citations84
US9534487B2Jan 3, 2017
Cement acoustic properties from ultrasonic signal amplitude dispersions in cased wells
SCHLUMBERGER TECHNOLOGY CORP19 citations84
US9732607B2Aug 15, 2017
Methods and apparatus for evaluating properties of cement utilizing ultrasonic signal testing
SCHLUMBERGER TECHNOLOGY CORP6 citations73
US10393905B2Aug 27, 2019
Torsional wave logging
SCHLUMBERGER TECHNOLOGY CORP0 citations51
US9448321B2Sep 20, 2016
Torsional wave logging
SCHLUMBERGER TECHNOLOGY CORP0 citations51
US9217807B2Dec 22, 2015
Systems and methods for identifying sanding in production wells using time-lapse sonic data
SCHLUMBERGER TECHNOLOGY CORP0 citations41
SEMICONDUCTOR MFG INT SHANGHAI CORP
7 patentsUS9418763B2Aug 16, 2016
Memory array, memory device, and methods for reading and operating the same
SEMICONDUCTOR MFG INT SHANGHAI CORP9 citations83
US9991002B2Jun 5, 2018
Methods for reading and operating memory device including efuse
SEMICONDUCTOR MFG INT SHANGHAI CORP3 citations72
US10418287B2Sep 17, 2019
Method and structure for improving dielectric reliability of CMOS device
SEMICONDUCTOR MFG INT SHANGHAI CORP1 citations62
US10672669B2Jun 2, 2020
Structure for improving dielectric reliability of CMOS device
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations52
US9991003B2Jun 5, 2018
Methods for reading and operating memory device including efuse
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations51
US9659672B2May 23, 2017
Memory device includes efuse, and methods for reading and operating the same
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations51
US10566243B2Feb 18, 2020
Semiconductor device having multiple work functions and manufacturing method thereof
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations41