Inventor
ISHIKAWA TETSUYA
JP263 patents
⚠️ This page may combine multiple inventors who share the name “ISHIKAWA TETSUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
47 patentsUS6596655B1Jul 22, 2003
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC77 citations99
US6562690B1May 13, 2003
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC102 citations99
US6541282B1Apr 1, 2003
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC80 citations99
US6348725B2Feb 19, 2002
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC161 citations99
US6303523B2Oct 16, 2001
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC751 citations99
US6070551AJun 6, 2000
Deposition chamber and method for depositing low dielectric constant films
APPLIED MATERIALS INC135 citations99
US5944902AAug 31, 1999
Plasma source for HDP-CVD chamber
APPLIED MATERIALS INC335 citations99
US5888414AMar 30, 1999
Plasma reactor and processes using RF inductive coupling and scavenger temperature control
APPLIED MATERIALS INC203 citations99
US5824607AOct 20, 1998
Plasma confinement for an inductively coupled plasma reactor
APPLIED MATERIALS INC144 citations99
US5772771AJun 30, 1998
Deposition chamber for improved deposition thickness uniformity
APPLIED MATERIALS INC176 citations99
US7955986B2Jun 7, 2011
Capacitively coupled plasma reactor with magnetic plasma control
APPLIED MATERIALS INC70 citations98
US7036453B2May 2, 2006
Apparatus for reducing plasma charge damage for plasma processes
APPLIED MATERIALS INC467 citations98
US6929700B2Aug 16, 2005
Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
APPLIED MATERIALS INC482 citations98
US6660662B2Dec 9, 2003
Method of reducing plasma charge damage for plasma processes
APPLIED MATERIALS INC478 citations98
US6660656B2Dec 9, 2003
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC111 citations98
US6596653B2Jul 22, 2003
Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
APPLIED MATERIALS INC542 citations98
US6518195B1Feb 11, 2003
Plasma reactor using inductive RF coupling, and processes
APPLIED MATERIALS INC162 citations98
US6447651B1Sep 10, 2002
High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers
APPLIED MATERIALS INC501 citations98
US6189483B1Feb 20, 2001
Process kit
APPLIED MATERIALS INC341 citations98
US6170428B1Jan 9, 2001
Symmetric tunable inductively coupled HDP-CVD reactor
APPLIED MATERIALS INC430 citations98
US6143078ANov 7, 2000
Gas distribution system for a CVD processing chamber
APPLIED MATERIALS INC147 citations98
US6068784AMay 30, 2000
Process used in an RF coupled plasma reactor
APPLIED MATERIALS INC173 citations98
US5761023AJun 2, 1998
Substrate support with pressure zones having reduced contact area and temperature feedback
APPLIED MATERIALS INC218 citations98
US5556501ASep 17, 1996
Silicon scavenger in an inductively coupled RF plasma reactor
APPLIED MATERIALS INC396 citations98
US5350479ASep 27, 1994
Electrostatic chuck for high power plasma processing
APPLIED MATERIALS INC199 citations98
US7925377B2Apr 12, 2011
Cluster tool architecture for processing a substrate
APPLIED MATERIALS INC45 citations97
US6734115B2May 11, 2004
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC67 citations97
US6545420B1Apr 8, 2003
Plasma reactor using inductive RF coupling, and processes
APPLIED MATERIALS INC135 citations97
US6488807B1Dec 3, 2002
Magnetic confinement in a plasma reactor having an RF bias electrode
APPLIED MATERIALS INC145 citations97
US6486081B1Nov 26, 2002
Gas distribution system for a CVD processing chamber
APPLIED MATERIALS INC124 citations97
US6251792B1Jun 26, 2001
Plasma etch processes
APPLIED MATERIALS INC122 citations97
US6239553B1May 29, 2001
RF plasma source for material processing
APPLIED MATERIALS INC119 citations97
US6182602B1Feb 6, 2001
Inductively coupled HDP-CVD reactor
APPLIED MATERIALS INC386 citations97
US6083344AJul 4, 2000
Multi-zone RF inductively coupled source configuration
APPLIED MATERIALS INC346 citations97
US7743728B2Jun 29, 2010
Cluster tool architecture for processing a substrate
APPLIED MATERIALS INC36 citations96
US7694647B2Apr 13, 2010
Cluster tool architecture for processing a substrate
APPLIED MATERIALS INC42 citations96
US6869896B2Mar 22, 2005
Plasma processes for depositing low dielectric constant films
APPLIED MATERIALS INC37 citations96
US6833052B2Dec 21, 2004
Deposition chamber and method for depositing low dielectric constant films
APPLIED MATERIALS INC65 citations96
US6589610B2Jul 8, 2003
Deposition chamber and method for depositing low dielectric constant films
APPLIED MATERIALS INC53 citations96
US6416823B2Jul 9, 2002
Deposition chamber and method for depositing low dielectric constant films
APPLIED MATERIALS INC61 citations96
US6383954B1May 7, 2002
Process gas distribution for forming stable fluorine-doped silicate glass and other films
APPLIED MATERIALS INC90 citations96
US6286451B1Sep 11, 2001
Dome: shape and temperature controlled surfaces
APPLIED MATERIALS INC101 citations96
US5876119AMar 2, 1999
In-situ substrate temperature measurement scheme in plasma reactor
APPLIED MATERIALS INC58 citations96
US5800621ASep 1, 1998
Plasma source for HDP-CVD chamber
APPLIED MATERIALS INC52 citations96
US5583737ADec 10, 1996
Electrostatic chuck usable in high density plasma
APPLIED MATERIALS INC57 citations96
US7221553B2May 22, 2007
Substrate support having heat transfer system
APPLIED MATERIALS INC49 citations95
US5539609AJul 23, 1996
Electrostatic chuck usable in high density plasma
APPLIED MATERIALS INC60 citations95
SOKUDO CO LTD
1 patent(unassigned)
1 patentCANON KK
1 patentShowing the top 50 of 263 patents by PatentIndex Score.