Inventor

HORIUCHI TADAHIKO

JP25 patents

⚠️ This page may combine multiple inventors who share the name “HORIUCHI TADAHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HORIUCHI TADAHIKO

NEC CORP

Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film

Method for fabricating the LDD-MOSFET

Method of fabricating semiconductor device having refractory metal silicide layer on impurity region using damage implant and single step anneal

Fabrication method of semiconductor device containing n- and p-channel MOSFETs

Method for making MIS transistor

Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor device

Semiconductor device and method of producing the same

Method of forming a semiconductor device having a titanium salicide shallow junction diffusion layer

Semiconductor device and method of producing the same

Method of making a semiconductor device having reduced junction capacitance between the source and drain regions and the substrate

Method of forming a titanium silicide film involved in a semiconductor device

BiCMOS inverter circuit

NSCORE INC

Nonvolatile semiconductor memory circuit utilizing a MIS transistor as a memory cell

Nonvolatile memory device

MIS-transistor-based nonvolatile memory for multilevel data storage

Nonvolatile memory cell employing hot carrier effect for data storage

Nonvolatile memory circuit

Storage and recovery of data based on change in MIS transistor characteristics

Nonvolatile memory circuit based on change in MIS transistor characteristics

Semiconductor memory device

Nonvolatile memory device

Mis-transistor-based nonvolatile memory circuit with stable and enhanced performance

Secure fingerprint data generating device

HORIUCHI TADAHIKO

Nonvolatile semiconductor memory device using MIS transistor

HIGUCHI TAKASHI

Silicon oxide removal apparatus and facility for recycling inert gas for use in silicon single crystal manufacturing apparatus