Inventor
TAMAKI TOMOHIRO
JP38 patents
⚠️ This page may combine multiple inventors who share the name “TAMAKI TOMOHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS ELECTRONICS CORP
14 patentsUS8796787B2Aug 5, 2014
Semiconductor device
RENESAS ELECTRONICS CORP14 citations92
US9825163B2Nov 21, 2017
Power MOSFET, an IGBT, and a power diode
RENESAS ELECTRONICS CORP6 citations84
US9379235B2Jun 28, 2016
Semiconductor device including a MOSFET and having a super-junction structure
RENESAS ELECTRONICS CORP9 citations84
US9269767B2Feb 23, 2016
Power superjunction MOSFET device with resurf regions
RENESAS ELECTRONICS CORP8 citations84
US9093288B2Jul 28, 2015
Power superjunction MOSFET device with resurf regions
RENESAS ELECTRONICS CORP8 citations84
US9041070B2May 26, 2015
Vertical power MOSFET
RENESAS ELECTRONICS CORP14 citations84
US8987819B2Mar 24, 2015
Semiconductor device
RENESAS ELECTRONICS CORP8 citations84
US8981469B2Mar 17, 2015
Power semiconductor device
RENESAS ELECTRONICS CORP8 citations84
US8786046B2Jul 22, 2014
Semiconductor device and method for manufacturing the same
RENESAS ELECTRONICS CORP11 citations84
US8558309B2Oct 15, 2013
Power semiconductor device
RENESAS ELECTRONICS CORP11 citations84
US9536943B2Jan 3, 2017
Vertical power MOSFET
RENESAS ELECTRONICS CORP3 citations73
US9786736B2Oct 10, 2017
Power semiconductor device
RENESAS ELECTRONICS CORP1 citations63
US8350325B2Jan 8, 2013
Power semiconductor device
RENESAS ELECTRONICS CORP3 citations63
US9660070B2May 23, 2017
Power superjunction MOSFET device with resurf regions
RENESAS ELECTRONICS CORP0 citations52
TOSHIBA KK
7 patentsUS10892351B2Jan 12, 2021
Semiconductor device
TOSHIBA KK2 citations73
US10418470B2Sep 17, 2019
Semiconductor device having IGBT portion and diode portion
TOSHIBA KK4 citations73
US9761582B2Sep 12, 2017
Semiconductor device and method of manufacturing semiconductor device
TOSHIBA KK6 citations73
US10700184B2Jun 30, 2020
Semiconductor device
TOSHIBA KK0 citations42
US10347713B2Jul 9, 2019
Semiconductor device having a triple region resurf structure
TOSHIBA KK0 citations42
US10083957B2Sep 25, 2018
Semiconductor device
TOSHIBA KK0 citations42
US9391071B2Jul 12, 2016
Semiconductor device
TOSHIBA KK0 citations42
KYOCERA DOCUMENT SOLUTIONS INC
7 patentsUS12189333B2Jan 7, 2025
Image forming apparatus capable of executing speed reduction control of system linear speed at time of warming-up
KYOCERA DOCUMENT SOLUTIONS INC0 citations52
US12124187B2Oct 22, 2024
Image forming apparatus capable of executing speed reduction control of system linear speed at time of warming-up
KYOCERA DOCUMENT SOLUTIONS INC0 citations52
US12124186B2Oct 22, 2024
Image forming apparatus having controller to control potential bias applied between developing roller and supply roller according to cumulative drive time
KYOCERA DOCUMENT SOLUTIONS INC0 citations52
US12242210B2Mar 4, 2025
Developing device of a non-magnetic one-component development type capable of suppressing toner melt adhesion to a regulation blade and image forming apparatus including the same
KYOCERA DOCUMENT SOLUTIONS INC0 citations51
US11467513B2Oct 11, 2022
Image forming apparatus
KYOCERA DOCUMENT SOLUTIONS INC0 citations50
US11366403B2Jun 21, 2022
Image forming apparatus capable of suppressing a white void in an image and a cleaning failure in a non-magnetic one component development device
KYOCERA DOCUMENT SOLUTIONS INC0 citations50
US11340537B2May 24, 2022
Development device and image forming apparatus including the development device
KYOCERA DOCUMENT SOLUTIONS INC0 citations50
TAMAKI TOMOHIRO
3 patentsMITSUBISHI ELECTRIC CORP
3 patentsUS12354878B2Jul 8, 2025
Semiconductor device having semiconductor substrate including hydrogen-related donor, and manufacturing method therefor
MITSUBISHI ELECTRIC CORP0 citations52
US11742313B2Aug 29, 2023
Pressure-contact semiconductor device
MITSUBISHI ELECTRIC CORP0 citations51
US11621321B2Apr 4, 2023
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations51