P

Inventor

NAKAMURA KAZUTOSHI

JP87 patents
⚠️ This page may combine multiple inventors who share the name “NAKAMURA KAZUTOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

35 patents
US6353252B1Mar 5, 2002

High breakdown voltage semiconductor device having trenched film connected to electrodes

TOSHIBA KK260 citations99
US6297534B1Oct 2, 2001

Power semiconductor device

TOSHIBA KK122 citations98
US6614089B2Sep 2, 2003

Field effect transistor

TOSHIBA KK64 citations96
US6614077B2Sep 2, 2003

Semiconductor device improved in ESD reliability

TOSHIBA KK65 citations96
US7138698B2Nov 21, 2006

Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof

TOSHIBA KK16 citations93
US6605844B2Aug 12, 2003

Semiconductor device

TOSHIBA KK31 citations93
US6563193B1May 13, 2003

Semiconductor device

TOSHIBA KK22 citations93
US6380566B1Apr 30, 2002

Semiconductor device having FET structure with high breakdown voltage

TOSHIBA KK44 citations93
US7893744B2Feb 22, 2011

Semiconductor device

TOSHIBA KK13 citations92
US7061060B2Jun 13, 2006

Offset-gate-type semiconductor device

TOSHIBA KK19 citations92
US6552389B2Apr 22, 2003

Offset-gate-type semiconductor device

TOSHIBA KK19 citations92
US7675757B2Mar 9, 2010

DC-DC converter

TOSHIBA KK18 citations84
US7557545B2Jul 7, 2009

Electric power unit operating in continuous and discontinuous conduction modes and control method therefor

TOSHIBA KK19 citations84
US7253473B2Aug 7, 2007

Semiconductor device and method of manufacturing the same

TOSHIBA KK10 citations84
US6977414B2Dec 20, 2005

Semiconductor device

TOSHIBA KK15 citations84
US6914294B2Jul 5, 2005

Semiconductor device

TOSHIBA KK15 citations84
US6864533B2Mar 8, 2005

MOS field effect transistor with reduced on-resistance

TOSHIBA KK20 citations84
US7432579B2Oct 7, 2008

Semiconductor device with horizontal MOSFET and Schottky barrier diode provided on single substrate

TOSHIBA KK8 citations74
US7115946B2Oct 3, 2006

MOS transistor having an offset region

TOSHIBA KK7 citations74
US7067876B2Jun 27, 2006

Semiconductor device

TOSHIBA KK9 citations74
US6878992B2Apr 12, 2005

Vertical-type power MOSFET with a gate formed in a trench

TOSHIBA KK8 citations74
US10418470B2Sep 17, 2019

Semiconductor device having IGBT portion and diode portion

TOSHIBA KK4 citations73
US9876011B2Jan 23, 2018

Semiconductor device

TOSHIBA KK3 citations73
US9761582B2Sep 12, 2017

Semiconductor device and method of manufacturing semiconductor device

TOSHIBA KK6 citations73
US9620631B2Apr 11, 2017

Power semiconductor device

TOSHIBA KK6 citations73
US7973580B2Jul 5, 2011

Semiconductor device

TOSHIBA KK4 citations73
US9324815B2Apr 26, 2016

Semiconductor device

TOSHIBA KK3 citations72
US9214535B2Dec 15, 2015

Semiconductor device

TOSHIBA KK6 citations72
US9054152B2Jun 9, 2015

Semiconductor device

TOSHIBA KK2 citations63
US7923807B2Apr 12, 2011

Semiconductor device having an insulator including an inductive load driving circuit

TOSHIBA KK4 citations63
US7906808B2Mar 15, 2011

Semiconductor device

TOSHIBA KK3 citations63
US7719053B2May 18, 2010

Semiconductor device having increased gate-source capacity provided by protruding electrode disposed between gate electrodes formed in a trench

TOSHIBA KK6 citations63
US7663186B2Feb 16, 2010

Semiconductor device

TOSHIBA KK4 citations63
US7579669B2Aug 25, 2009

Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof

TOSHIBA KK3 citations63
US7554160B2Jun 30, 2009

Semiconductor device

TOSHIBA KK6 citations63

BROTHER IND LTD

11 patents

NAKAMURA KAZUTOSHI

3 patents

HAMAGUCHI MASANORI

1 patent

Showing the top 50 of 87 patents by PatentIndex Score.