Inventor
HSU SHOU-YI
TW24 patents
⚠️ This page may combine multiple inventors who share the name “HSU SHOU-YI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LIN YUNG-FA
15 patentsUS8940606B2Jan 27, 2015
Method for fabricating trench type power transistor device
LIN YUNG-FA8 citations83
US8748973B2Jun 10, 2014
Super junction transistor and fabrication method thereof
LIN YUNG-FA9 citations83
US8541278B2Sep 24, 2013
Method for fabricating super-junction power device with reduced miller capacitance
LIN YUNG-FA8 citations83
US8536003B2Sep 17, 2013
Method for fabricating semiconductor power device
LIN YUNG-FA8 citations83
US8536004B2Sep 17, 2013
Method for fabricating semiconductor power device
LIN YUNG-FA9 citations83
US8455946B2Jun 4, 2013
Lateral stack-type super junction power semiconductor device
LIN YUNG-FA5 citations73
US8466051B2Jun 18, 2013
Method for fabricating Schottky device
LIN YUNG-FA6 citations72
US8404531B2Mar 26, 2013
Method for fabricating a power transistor
LIN YUNG-FA5 citations72
US8753937B2Jun 17, 2014
Manufacturing method of power transistor device with super junction
LIN YUNG-FA3 citations62
US8524559B2Sep 3, 2013
Manufacturing method of power transistor device
LIN YUNG-FA3 citations62
US8492221B2Jul 23, 2013
Method for fabricating power semiconductor device with super junction structure
LIN YUNG-FA3 citations62
US8178410B1May 15, 2012
Method for fabricating a semiconductor power device
LIN YUNG-FA5 citations61
US8936990B2Jan 20, 2015
Manufacturing method of power transistor device with super junction
LIN YUNG-FA0 citations52
US8928070B2Jan 6, 2015
Trench type power transistor device with super junction
LIN YUNG-FA1 citations52
US8890253B2Nov 18, 2014
Semiconductor device
LIN YUNG-FA0 citations41
ANPEC ELECTRONICS CORP
6 patentsUS8790971B1Jul 29, 2014
Method of fabricating a super junction transistor
ANPEC ELECTRONICS CORP8 citations84
US8603879B2Dec 10, 2013
Method for fabricating super-junction power device with reduced miller capacitance
ANPEC ELECTRONICS CORP8 citations84
US9029942B2May 12, 2015
Power transistor device with super junction
ANPEC ELECTRONICS CORP0 citations52
US8940607B2Jan 27, 2015
Manufacturing method of trench type power transistor device with super junction
ANPEC ELECTRONICS CORP0 citations52
US8754473B2Jun 17, 2014
Power transistor device
ANPEC ELECTRONICS CORP0 citations52
US8357972B2Jan 22, 2013
Semiconductor power device
ANPEC ELECTRONICS CORP1 citations51
TAIWAN SEMICONDUCTOR MFG
3 patentsUS6153517ANov 28, 2000
Low resistance poly landing pad
TAIWAN SEMICONDUCTOR MFG24 citations90
US6881986B1Apr 19, 2005
Design and fabrication method for finger n-type doped photodiodes with high sensitivity for CIS products
TAIWAN SEMICONDUCTOR MFG12 citations76
US6071812AJun 6, 2000
Method of forming a modified metal contact opening to decrease its aspect ratio for deep sub-micron processes
TAIWAN SEMICONDUCTOR MFG14 citations71