Inventor

HO JON-HSU

TW34 patents

⚠️ This page may combine multiple inventors who share the name “HO JON-HSU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HO JON-HSU

TAIWAN SEMICONDUCTOR MFG CO LTD

Threshold voltage adjustment for a gate-all-around semiconductor structure

Multi-gate semiconductor devices and methods of forming the same

Integrated circuit modeling methods and systems

Method of manufacturing a semiconductor device and a semiconductor device

Threshold voltage adjustment for a gate-all-around semiconductor structure

Method of manufacturing semiconductor devices and semiconductor devices

Source/drain silicide for multigate device performance and method of fabricating thereof

Source/drain silicide for multigate device performance and method of fabricating thereof

Multi-gate devices and fabricating the same with etch rate modulation

Semiconductor device structure incorporating air gap

Method of manufacturing semiconductor devices and semiconductor devices

Multi-gate devices and fabricating the same with etch rate modulation

Semiconductor device structure incorporating air gap

Channel configuration for improving multigate device performance and method of fabrication thereof

Multi-gate devices and fabricating the same with etch rate modulation

Method of manufacturing semiconductor devices and semiconductor devices

Threshold voltage adjustment for a gate-all-around semiconductor structure

Series connected transistor structure and method of manufacturing the same

Integrated circuit layout generation method

Integrated circuit layout generation method

Integrated circuit layout generation method and system

Multi-gate devices with multi-layer inner spacers and fabrication methods thereof

Channel configurations with stacked segments for gate-all-around based devices and methods of fabrication thereof

Multi-gate devices with multi-layer inner spacers and fabrication methods thereof

Series-connected transistor structure

Multi-gate semiconductor devices

Semiconductor device having nanosheet transistor and methods of fabrication thereof

Semiconductor device including a semiconductor sheet interconnecting a source region and a drain region

Semiconductor device including a semiconductor sheet interconnecting a source region and a drain region

TAIWAN SEMICONDUCTOR MFG

Fin-like field effect transistor (FinFET) channel profile engineering method and associated device

FinFET design controlling channel thickness

WU ZHIQIANG

FinFET design controlling channel thickness

WANG CHIH-CHING

Multi-gate semiconductor devices and methods of forming the same

HO JON-HSU

Multi-gate semiconductor devices