Inventor

HSIEH WEN-HSING

TW76 patents

⚠️ This page may combine multiple inventors who share the name “HSIEH WEN-HSING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HSIEH WEN-HSING

TAIWAN SEMICONDUCTOR MFG CO LTD

Threshold voltage adjustment for a gate-all-around semiconductor structure

Horizontal gate-all-around device having wrapped-around source and drain

Multi-gate device and method of fabrication thereof

Horizontal gate-all-around device having wrapped-around source and drain

Integrated circuit structure with substrate isolation and un-doped channel

Multi-gate device and method of fabrication thereof

Multi-gate semiconductor devices and methods of forming the same

Integrated circuit modeling methods and systems

Semiconductor memory devices with different doping types

Gate all around transistor device and fabrication methods thereof

Multi-gate device and method of fabrication thereof

Method of manufacturing a semiconductor device and a semiconductor device

Multi-gate device and method of fabrication thereof

Multi-gate device and method of fabrication thereof

Horizontal gate all-around device having wrapped-around source and drain

Threshold voltage adjustment for a gate-all-around semiconductor structure

Method of manufacturing semiconductor devices and semiconductor devices

Semiconductor device having nanosheet transistor and methods of fabrication thereof

Source/drain silicide for multigate device performance and method of fabricating thereof

Horizontal gate all-around device having wrapped-around source and drain

Source/drain silicide for multigate device performance and method of fabricating thereof

Multi-gate devices and fabricating the same with etch rate modulation

Source/drain features with improved strain properties

Source/drain features with improved strain properties

Semiconductor memory devices with different doping types

Semiconductor device structure incorporating air gap

Semiconductor device structure integrating air gaps and methods of forming the same

Method of manufacturing semiconductor devices and semiconductor devices

Multi-gate devices and fabricating the same with etch rate modulation

Semiconductor device structure incorporating air gap

Channel configuration for improving multigate device performance and method of fabrication thereof

Semiconductor device structure integrating air gaps and methods of forming the same

Multi-gate devices and fabricating the same with etch rate modulation

Method of manufacturing semiconductor devices and semiconductor devices

Threshold voltage adjustment for a gate-all-around semiconductor structure

Series connected transistor structure and method of manufacturing the same

Semiconductor device transistor having multiple channels with different widths and materials

TAIWAN SEMICONDUCTOR MFG

Method of making a FinFET device

Fin-like field effect transistor (FinFET) channel profile engineering method and associated device

FinFET with dual workfunction gate structure

FinFET having uniform doping profile and method of forming the same

High efficiency FinFET diode

Source and drain dislocation fabrication in FinFETs

FinFET design controlling channel thickness

Semiconductor device with a buried stressor

Semiconductor integrated device with channel region

High efficiency FinFET diode

WU ZHIQIANG

FinFET design controlling channel thickness

Semiconductor device with a buried stressor

Wu wei-hao

FinFET method and structure with embedded underlying anti-punch through layer