P

Inventor

CHENG SHYH-WEI

TW22 patents
⚠️ This page may combine multiple inventors who share the name “CHENG SHYH-WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

19 patents
US9527721B2Dec 27, 2016

Movement microelectromechanical systems (MEMS) package

TAIWAN SEMICONDUCTOR MFG CO LTD14 citations81
US11407636B2Aug 9, 2022

Inter-poly connection for parasitic capacitor and die size improvement

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11305980B2Apr 19, 2022

Anti-stiction process for MEMS device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10513432B2Dec 24, 2019

Anti-stiction process for MEMS device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10510671B2Dec 17, 2019

Method for forming semiconductor device structure with conductive line

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10155656B2Dec 18, 2018

Inter-poly connection for parasitic capacitor and die size improvement

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations72
US10131536B2Nov 20, 2018

Heater design for MEMS chamber pressure control

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9884758B2Feb 6, 2018

Selective nitride outgassing process for MEMS cavity pressure control

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9880192B2Jan 30, 2018

Method of manufacturing a motion sensor device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US9865609B2Jan 9, 2018

One-time-programming (OTP) memory cell with floating gate shielding

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations72
US9966427B2May 8, 2018

Metal-insulator-metal (MIM) capacitor with an electrode scheme for improved manufacturability and reliability

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations67
US12583740B2Mar 24, 2026

Inter-poly connection for parasitic capacitor and die size improvement

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12157667B2Dec 3, 2024

Anti-stiction process for MEMS device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9090452B2Jul 28, 2015

Mechanism for forming MEMS device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations58
US10879186B1Dec 29, 2020

Method for forming semiconductor device structure with conductive line

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10770401B2Sep 8, 2020

Method for forming semiconductor device structure with conductive line

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10532925B2Jan 14, 2020

Heater design for MEMS chamber pressure control

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9997601B2Jun 12, 2018

Metal-oxide-semiconductor field-effect transistor with extended gate dielectric layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9561954B2Feb 7, 2017

Method of fabricating MEMS devices having a plurality of cavities

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

TAIWAN SEMICONDUCTOR MFG

2 patents

CHENG SHYH-WEI

1 patent