Inventor

HUNG TUNG-HUSAN

TW2 patents

Patents

2 patents

US10141431B1Nov 27, 2018

Epitaxy source/drain regions of FinFETs and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations81

US10777664B2Sep 15, 2020

Epitaxy source/drain regions of FinFETs and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations70