Inventor
HONG JIN PYO
KR24 patents
⚠️ This page may combine multiple inventors who share the name “HONG JIN PYO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNIV HANYANG IND UNIV COOP FOUND
9 patentsUS12513913B2Dec 30, 2025
Selective element doped with chalcogen element
UNIV HANYANG IND UNIV COOP FOUND0 citations62
US10885960B2Jan 5, 2021
Spin device, and operating method therefor and manufacturing method therefor
UNIV HANYANG IND UNIV COOP FOUND1 citations59
US11022662B2Jun 1, 2021
Three-axis magnetic sensor having perpendicular magnetic anisotropy and in-plane magnetic anisotropy
UNIV HANYANG IND UNIV COOP FOUND1 citations56
US11258009B2Feb 22, 2022
Switching atomic transistor and method for operating same
UNIV HANYANG IND UNIV COOP FOUND0 citations55
US10923656B2Feb 16, 2021
Switching atomic transistor and method for operating same
UNIV HANYANG IND UNIV COOP FOUND0 citations55
US11917926B2Feb 27, 2024
Synthetic antiferromagnetic material and multibit memory using same
UNIV HANYANG IND UNIV COOP FOUND0 citations51
US12361267B2Jul 15, 2025
Operation method of neural network element using spin-orbit torque
UNIV HANYANG IND UNIV COOP FOUND0 citations46
US12426521B2Sep 23, 2025
Selector device comprising polycrystalline metal oxide layer and cross-point memory comprising same
UNIV HANYANG IND UNIV COOP FOUND0 citations43
US10700266B2Jun 30, 2020
MTJ structure having vertical magnetic anisotropy and magnetic element including the same
UNIV HANYANG IND UNIV COOP FOUND0 citations40
IUCF HYU
3 patentsUS12108683B2Oct 1, 2024
Magnetic tunnel junction device and operating method therefor
IUCF HYU2 citations66
US12274178B2Apr 8, 2025
Logic element using spin-orbit torque and magnetic tunnel junction structure
IUCF HYU1 citations63
US11522134B2Dec 6, 2022
Resistive switching memory including resistive switching layer fabricated using sputtering and method of fabricating the same
IUCF HYU0 citations42