Inventor

YAMADA ATSUSHI

JP309 patents

⚠️ This page may combine multiple inventors who share the name “YAMADA ATSUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YAMADA ATSUSHI

ISARA CORP

Using a digital certificate with multiple cryptosystems

Using a digital certificate with multiple cryptosystems

Key encapsulation mechanisms

Using a secret generator in an elliptic curve cryptography (ECC) digital signature scheme

Multi-round key encapsulation process

Merkle signature scheme using subtrees

Constructing a multiple-entity root certificate data block chain

TRANSPHORM JAPAN INC

Semiconductor device and manufacturing method of semiconductor device

Compound semiconductor device and method for manufacturing the same

Method of manufacturing a semiconductor device and semiconductor device

Semiconductor device including gate electrode provided over active region in p-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatus

Semiconductor device and manufacturing method of semiconductor device

Semiconductor device including gate electrode provided over active region in p-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatus

IBM

Topology determination, decomposable shape generation, and structured mesh generation

Mesh generation system, design support system, analysis system, analysis method, mesh generation method, and storage medium and program transmission apparatus therefor

Meshing method and apparatus

Meshing method and apparatus

SHARP KK

Radio communication device with integrated antenna, transmitter, and receiver

Microwave and millimeter wave device mounted on a semiconductive substrate and comprised of different kinds of functional blocks

Antenna-integrated microwave-millimeter wave module

Wireless communication device

YAMADA ATSUSHI

Automobile tire

Semiconductor device including gate electrode provided over active region in P-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatus

Double-deck elevator

Compound semiconductor device and method of manufacturing the same

KOITO MFG CO LTD

Method of manufacturing a synthetic resin part integrally formed with metal members

Display device for automotive mark plate

Illuminating device for automotive front grille

Display device

NIPPON PAINT CO LTD

Method of forming metallic coatings

Top coat composition containing microgel particles

Multilayer coating having a clear top coat formed on a color base coat and method of forming the same

SEIKO EPSON CORP

Backlight control device for liquid crystal display

Memory card with control and voltage boosting circuits and electronic appliance using the same

BRIDGESTONE CORP

Pneumatic radial tires

Tread portion of an automobile tire

BLACKBERRY LTD

Public key encryption algorithms for hard lock file encryption

Public key encryption algorithms for hard lock file encryption

FUJITSU MICROELECTRONICS LTD

Apparatus and method for processing an image

COMM RES LAB INDEPENDENT ADMIN

Radio communication device

SUMITOMO METAL MINING CO

Optical fiber guide structure and method of fabricating same

PANASONIC IP MAN CO LTD

Light emitting device, display device, and manufacturing method for light emitting device

DENSO CORP

Electromagnetic valve driving apparatus having current limit switching function

IMADA TADAHIRO

Compound semiconductor device and manufacturing method of the same

MAKITA CORP

Desk-top circular saw including chip discharging means

ANRITSU CORP

Semiconductor light emitting device in which high-power light output can be obtained with a simple structure including InGaAsP active layer not less than 3.5 microns and InGaAsP and InP cladding

SANYO ELECTRIC CO

Organic waste water treating apparatus having treating layer and auxiliary layer

SHIMIZU CONSTRUCTION CO LTD

Column and beam connecting assembly

OKAMOTO NAOYA

Semiconductor device and method for manufacturing the same, and amplifier

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Method of producing GaN-based semiconductor laser device and semiconductor substrate used therefor