Inventor
CHUANG CHIAO-SHUN
TW29 patents
⚠️ This page may combine multiple inventors who share the name “CHUANG CHIAO-SHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
DIODES INC
16 patentsUS11456379B1Sep 27, 2022
Split-gate trench MOSFET
DIODES INC11 citations81
US9786753B2Oct 10, 2017
Self-aligned dual trench device
DIODES INC2 citations69
US12549181B2Feb 10, 2026
Gate drive apparatus and control method
DIODES INC0 citations62
US12525977B2Jan 13, 2026
Gate drive apparatus and control method
DIODES INC0 citations62
US12471347B2Nov 11, 2025
Vertical power semiconductor device and manufacturing method thereof
DIODES INC0 citations62
US12262550B1Mar 25, 2025
Semiconductor structure and manufacturing method thereof
DIODES INC0 citations62
US12218191B1Feb 4, 2025
Semiconductor structure and manufacturing method thereof
DIODES INC0 citations62
US12126336B2Oct 22, 2024
Gate drive apparatus and control method
DIODES INC0 citations62
US11876511B2Jan 16, 2024
Gate drive apparatus control method
DIODES INC0 citations62
US8368140B2Feb 5, 2013
Trench MOS device with Schottky diode and method for manufacturing same
DIODES INC3 citations62
US11335803B2May 17, 2022
Source-down transistor with vertical field plate
DIODES INC0 citations59
US10170572B2Jan 1, 2019
Self-aligned dual trench device
DIODES INC1 citations59
US11749750B2Sep 5, 2023
Split-gate trench MOSFET
DIODES INC0 citations58
US11101796B2Aug 24, 2021
Gate drive apparatus and control method
DIODES INC0 citations56
US12261046B1Mar 25, 2025
Semiconductor structures and manufacturing methods thereof
DIODES INC0 citations52
US11251152B2Feb 15, 2022
Thinned semiconductor chip with edge support
DIODES INC0 citations47
MOSEL VITELIC INC
9 patentsUS6855986B2Feb 15, 2005
Termination structure for trench DMOS device and method of making the same
MOSEL VITELIC INC25 citations91
US7087958B2Aug 8, 2006
Termination structure of DMOS device
MOSEL VITELIC INC37 citations90
US7084457B2Aug 1, 2006
DMOS device having a trenched bus structure
MOSEL VITELIC INC12 citations83
US6821913B2Nov 23, 2004
Method for forming dual oxide layers at bottom of trench
MOSEL VITELIC INC12 citations73
US7265024B2Sep 4, 2007
DMOS device having a trenched bus structure
MOSEL VITELIC INC7 citations72
US6660592B2Dec 9, 2003
Fabricating a DMOS transistor
MOSEL VITELIC INC3 citations62
US6998315B2Feb 14, 2006
Termination structure for trench DMOS device and method of making the same
MOSEL VITELIC INC4 citations61
US6989306B2Jan 24, 2006
Termination structure of DMOS device and method of forming the same
MOSEL VITELIC INC6 citations61
US6677223B2Jan 13, 2004
Transistor with highly uniform threshold voltage
MOSEL VITELIC INC0 citations51
CHUANG CHIAO-SHUN
3 patentsUS8912621B1Dec 16, 2014
Trench schottky devices
CHUANG CHIAO-SHUN10 citations79
US8907325B2Dec 9, 2014
Thin film transistor having highly dielectric organic layer
CHUANG CHIAO-SHUN2 citations56
US8314471B2Nov 20, 2012
Trench devices having improved breakdown voltages and method for manufacturing same
CHUANG CHIAO-SHUN0 citations50