Inventor
PARK JEA GUN
KR58 patents
⚠️ This page may combine multiple inventors who share the name “PARK JEA GUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNIV HANYANG IND UNIV COOP FOUND
14 patentsUS10453510B2Oct 22, 2019
Memory device
UNIV HANYANG IND UNIV COOP FOUND9 citations83
US11258935B2Feb 22, 2022
Dual image sensor including quantum dot layer
UNIV HANYANG IND UNIV COOP FOUND2 citations73
US10854254B2Dec 1, 2020
Memory device
UNIV HANYANG IND UNIV COOP FOUND2 citations72
US10580964B2Mar 3, 2020
Memory device
UNIV HANYANG IND UNIV COOP FOUND5 citations71
US11050014B2Jun 29, 2021
Memory device
UNIV HANYANG IND UNIV COOP FOUND3 citations70
US10373825B1Aug 6, 2019
Method for manufacturing gallium nitride substrate using core-shell nanoparticle
UNIV HANYANG IND UNIV COOP FOUND2 citations70
US10497562B1Dec 3, 2019
Method for manufacturing gallium nitride substrate using the hydride vapor phase epitaxy
UNIV HANYANG IND UNIV COOP FOUND5 citations69
US11932794B2Mar 19, 2024
Quantum-dot based on graded-shell structure and manufacturing method of the same
UNIV HANYANG IND UNIV COOP FOUND0 citations62
US10886274B2Jan 5, 2021
Two-terminal vertical 1T-DRAM and method of fabricating the same
UNIV HANYANG IND UNIV COOP FOUND1 citations59
US11296276B2Apr 5, 2022
Memory device based on multi-bit perpendicular magnetic tunnel junction
UNIV HANYANG IND UNIV COOP FOUND0 citations54
US10783945B2Sep 22, 2020
Memory device
UNIV HANYANG IND UNIV COOP FOUND0 citations51
US10643681B2May 5, 2020
Memory device
UNIV HANYANG IND UNIV COOP FOUND0 citations51
US10586919B2Mar 10, 2020
Memory device
UNIV HANYANG IND UNIV COOP FOUND0 citations49
US11404458B2Aug 2, 2022
Image sensor including quantum dot layer
UNIV HANYANG IND UNIV COOP FOUND0 citations47
SAMSUNG ELECTRONICS CO LTD
13 patentsUS6045610AApr 4, 2000
Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance
SAMSUNG ELECTRONICS CO LTD102 citations97
US6780238B2Aug 24, 2004
Argon/ammonia rapid thermal annealing for silicon wafers
SAMSUNG ELECTRONICS CO LTD26 citations92
US6503594B2Jan 7, 2003
Silicon wafers having controlled distribution of defects and slip
SAMSUNG ELECTRONICS CO LTD36 citations92
US6485807B1Nov 26, 2002
Silicon wafers having controlled distribution of defects, and methods of preparing the same
SAMSUNG ELECTRONICS CO LTD37 citations92
US6146459ANov 14, 2000
Czochralski pullers for manufacturing monocrystalline silicon ingots by controlling temperature at the center and edge of an ingot-melt interface
SAMSUNG ELECTRONICS CO LTD34 citations92
US6821344B2Nov 23, 2004
Czochralski pullers including heat shield housings having sloping top and bottom
SAMSUNG ELECTRONICS CO LTD15 citations84
US6676753B2Jan 13, 2004
Czochralski pullers for manufacturing monocrystalline silicon ingots, including heat shield having sloped portions
SAMSUNG ELECTRONICS CO LTD11 citations74
US6409833B2Jun 25, 2002
Insulating-containing ring-shaped heat shields and support members for Czochralski pullers
SAMSUNG ELECTRONICS CO LTD10 citations74
US6251184B1Jun 26, 2001
Insulating-containing ring-shaped heat shields for czochralski pullers
SAMSUNG ELECTRONICS CO LTD5 citations74
US6472040B1Oct 29, 2002
Semi-pure and pure monocrystalline silicon ingots and wafers
SAMSUNG ELECTRONICS CO LTD5 citations73
US6340392B1Jan 22, 2002
Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface
SAMSUNG ELECTRONICS CO LTD5 citations63
US11093824B2Aug 17, 2021
Neuromorphic device and method of driving the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US6170235B1Jan 9, 2001
Wafer packaging method
SAMSUNG ELECTRONICS CO LTD3 citations62
IUCF HYU
11 patentsUS10516097B2Dec 24, 2019
Memory device
IUCF HYU3 citations70
US11827825B2Nov 28, 2023
Quantum-dot based on multi-shell structure including luminescent dopant
IUCF HYU0 citations62
US12082508B2Sep 3, 2024
Memory device containing magnetic tunnel junction
IUCF HYU1 citations60
US11968874B2Apr 23, 2024
Organic light-emitting display device including quantum dots
IUCF HYU1 citations59
US9287132B2Mar 15, 2016
Multi-selective polishing slurry composition and a semiconductor element production method using the same
IUCF HYU2 citations59
US11133458B2Sep 28, 2021
Multi-bit magnetic memory device
IUCF HYU1 citations56
US12541678B2Feb 3, 2026
Neuron and neuromorphic system including the same
IUCF HYU0 citations52
US12507444B2Dec 23, 2025
Neuron, neuromorphic system including the same
IUCF HYU0 citations52
US12295146B2May 6, 2025
Selection device and memory device using the same
IUCF HYU0 citations52
US12417379B2Sep 16, 2025
Neuron and neuromorphic system including the neuron
IUCF HYU0 citations50
US11968915B2Apr 23, 2024
Selector and memory device using the same
IUCF HYU0 citations49
PARK JEA-GUN
3 patentsUS7338882B2Mar 4, 2008
Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the same
PARK JEA-GUN11 citations83
US8860109B2Oct 14, 2014
Capacitor-less memory device
PARK JEA-GUN2 citations60
US8233313B2Jul 31, 2012
Conductive organic non-volatile memory device with nanocrystals embedded in an amorphous barrier layer
PARK JEA-GUN0 citations49
IUCF-HYU
2 patentsSILTRON INC
1 patentSUMCO CORP
1 patentPARK JEA GUN
1 patentUNIV SOGANG IND UNIV COOP FOUN
1 patentHYNIX SEMICONDUCTOR INC
1 patentPAIK UN GYU
1 patentK C TECH CO LTD
1 patentShowing the top 50 of 58 patents by PatentIndex Score.