Inventor
HAN QIUHUA
CN20 patents
⚠️ This page may combine multiple inventors who share the name “HAN QIUHUA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEMICONDUCTOR MFG INT SHANGHAI
9 patentsUS9331079B2May 3, 2016
Semiconductor device and method of manufacturing the same
SEMICONDUCTOR MFG INT SHANGHAI4 citations71
US9196725B2Nov 24, 2015
Semiconductor structure having common gate and fabrication method thereof
SEMICONDUCTOR MFG INT SHANGHAI3 citations60
US8367554B2Feb 5, 2013
Methods for forming a gate and a shallow trench isolation region and for planarizing an etched surface of silicon substrate
SEMICONDUCTOR MFG INT SHANGHAI2 citations59
US9147746B2Sep 29, 2015
MOS transistors and fabrication method thereof
SEMICONDUCTOR MFG INT SHANGHAI1 citations51
US9123812B2Sep 1, 2015
Semiconductor device and fabrication method
SEMICONDUCTOR MFG INT SHANGHAI0 citations51
US9099338B2Aug 4, 2015
Method of forming high K metal gate
SEMICONDUCTOR MFG INT SHANGHAI1 citations51
US9312355B2Apr 12, 2016
Stripe structures and fabrication method thereof
SEMICONDUCTOR MFG INT SHANGHAI0 citations49
US8377827B2Feb 19, 2013
Methods for forming a gate and a shallow trench isolation region and for planarizing an etched surface of silicon substrate
SEMICONDUCTOR MFG INT SHANGHAI0 citations48
US8039402B2Oct 18, 2011
Methods for forming a gate and a shallow trench isolation region and for planarizating an etched surface of silicon substrate
SEMICONDUCTOR MFG INT SHANGHAI0 citations48
SEMICONDUCTOR MFG INT SHANGHAI CORP
5 patentsUS9741820B2Aug 22, 2017
PMOS transistor and fabrication method thereof
SEMICONDUCTOR MFG INT SHANGHAI CORP3 citations68
US9704972B2Jul 11, 2017
Semiconductor structures and fabrication method thereof
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations51
US9640657B2May 2, 2017
Semiconductor device
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations51
US10403732B2Sep 3, 2019
Semiconductor device including stripe structures
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations49
US10050036B2Aug 14, 2018
Semiconductor structure having common gate
SEMICONDUCTOR MFG INT SHANGHAI CORP1 citations49
SEMICONDUCTOR MFG INT BEIJING CORP
4 patentsUS11205596B2Dec 21, 2021
Method of FinFET contact formation
SEMICONDUCTOR MFG INT BEIJING CORP0 citations42
US9660058B2May 23, 2017
Method of FinFET formation
SEMICONDUCTOR MFG INT BEIJING CORP0 citations40
US9508609B2Nov 29, 2016
Fin field effect transistor and method for forming the same
SEMICONDUCTOR MFG INT BEIJING CORP0 citations40
US10707117B2Jul 7, 2020
Interconnection structure and method for manufacturing same
SEMICONDUCTOR MFG INT BEIJING CORP0 citations33