P

Inventor

JIN SEUNG WOO

KR29 patents
⚠️ This page may combine multiple inventors who share the name “JIN SEUNG WOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HYNIX SEMICONDUCTOR INC

24 patents
US7470593B2Dec 30, 2008

Method for manufacturing a cell transistor of a semiconductor memory device

HYNIX SEMICONDUCTOR INC94 citations97
US7955074B2Jun 7, 2011

Apparatus and method for thermally treating semiconductor device capable of preventing wafer from warping

HYNIX SEMICONDUCTOR INC7 citations84
US7511337B2Mar 31, 2009

Recess gate type transistor

HYNIX SEMICONDUCTOR INC8 citations83
US7825015B2Nov 2, 2010

Method for implanting ions in semiconductor device

HYNIX SEMICONDUCTOR INC5 citations73
US7687852B2Mar 30, 2010

Recess gate type transistor

HYNIX SEMICONDUCTOR INC6 citations73
US7208419B2Apr 24, 2007

Method for fabricating semiconductor device

HYNIX SEMICONDUCTOR INC2 citations63
US7052981B2May 30, 2006

Ion implantation method

HYNIX SEMICONDUCTOR INC3 citations63
US8343859B2Jan 1, 2013

Non-uniform ion implantation apparatus and method thereof

HYNIX SEMICONDUCTOR INC2 citations62
US7678653B2Mar 16, 2010

Method of fabricating a recess gate type transistor

HYNIX SEMICONDUCTOR INC1 citations62
US7488959B2Feb 10, 2009

Apparatus and method for partial ion implantation

HYNIX SEMICONDUCTOR INC2 citations62
US7365406B2Apr 29, 2008

Non-uniform ion implantation apparatus and method thereof

HYNIX SEMICONDUCTOR INC3 citations62
US7279691B2Oct 9, 2007

Ion implantation apparatus and method for implanting ions by using the same

HYNIX SEMICONDUCTOR INC2 citations62
US7186627B2Mar 6, 2007

Method for forming device isolation film of semiconductor device

HYNIX SEMICONDUCTOR INC5 citations62
US7186647B2Mar 6, 2007

Method for fabricating semiconductor device having landing plug contact structure

HYNIX SEMICONDUCTOR INC3 citations62
US7576339B2Aug 18, 2009

Ion implantation apparatus and method for obtaining non-uniform ion implantation energy

HYNIX SEMICONDUCTOR INC5 citations58
US7700442B2Apr 20, 2010

Semiconductor device having a recessed gate and asymmetric dopant regions and method of manufacturing the same

HYNIX SEMICONDUCTOR INC0 citations52
US7351627B2Apr 1, 2008

Method of manufacturing semiconductor device using gate-through ion implantation

HYNIX SEMICONDUCTOR INC1 citations52
US7186631B2Mar 6, 2007

Method for manufacturing a semiconductor device

HYNIX SEMICONDUCTOR INC0 citations52
US6927152B2Aug 9, 2005

Method for fabricating semiconductor device

HYNIX SEMICONDUCTOR INC0 citations52
US7790551B2Sep 7, 2010

Method for fabricating a transistor having a recess gate structure

HYNIX SEMICONDUCTOR INC1 citations51
US7554106B2Jun 30, 2009

Partial ion implantation apparatus and method using bundled beam

HYNIX SEMICONDUCTOR INC0 citations51
US7855113B2Dec 21, 2010

Method for fabricating semiconductor memory device

HYNIX SEMICONDUCTOR INC0 citations48
US6979611B2Dec 27, 2005

Method for fabricating semiconductor device

HYNIX SEMICONDUCTOR INC1 citations48
US7687350B2Mar 30, 2010

Method for manufacturing semiconductor memory device using asymmetric junction ion implantation

HYNIX SEMICONDUCTOR INC0 citations41

HYUNDAI ELECTRONICS IND

2 patents

SK HYNIX INC

2 patents

SOHN YOUNG-SUN

1 patent