Inventor
SHIBANO TERUO
JP13 patents
Patents
13 patentsUS6101085AAug 8, 2000
High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film
MITSUBISHI ELECTRIC CORP40 citations96
US5834060ANov 10, 1998
High dielectric constant thin film structure method for forming high dielectric constant thin film and apparatus for forming high dielectric contact thin film
MITSUBISHI ELECTRIC CORP62 citations96
US6239460B1May 29, 2001
Semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium
MITSUBISHI ELECTRIC CORP36 citations92
US4915979AApr 10, 1990
Semiconductor wafer treating device utilizing ECR plasma
MITSUBISHI ELECTRIC CORP24 citations92
US4877509AOct 31, 1989
Semiconductor wafer treating apparatus utilizing a plasma
MITSUBISHI ELECTRIC CORP43 citations92
US6015989AJan 18, 2000
Semiconductor device having a capacitor electrode formed of iridum or ruthenium and a quantity of oxygen
MITSUBISHI ELECTRIC CORP53 citations90
US5989635ANov 23, 1999
High dielectric constant thin film structure, method for forming high dielectric constant thin film and apparatus for forming high dielectric constant thin film
MITSUBISHI ELECTRIC CORP14 citations82
US6885726B2Apr 26, 2005
Fluorescent X-ray analysis apparatus
MITSUBISHI ELECTRIC CORP18 citations81
US4982138AJan 1, 1991
Semiconductor wafer treating device utilizing a plasma
MITSUBISHI ELECTRIC CORP19 citations81
US5882410AMar 16, 1999
High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film
MITSUBISHI ELECTRIC CORP11 citations74
US5304775AApr 19, 1994
Method of etching a wafer having high anisotropy with a plasma gas containing halogens and in inert element
MITSUBISHI ELECTRIC CORP9 citations72
US6165556ADec 26, 2000
High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film
MITSUBISHI ELECTRIC CORP1 citations63
US6420191B2Jul 16, 2002
Method of manufacturing semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium
MITSUBISHI ELECTRIC CORP2 citations62