Inventor

WADA TOMOHISA

JP57 patents

Patents

50 patents

US5724292AMar 3, 1998

Semiconductor integrated circuit device with adjustable high voltage detection circuit

MITSUBISHI ELECTRIC CORP46 citations93

US5959639ASep 28, 1999

Computer graphics apparatus utilizing cache memory

MITSUBISHI ELECTRIC CORP43 citations93

US5886388AMar 23, 1999

Static semiconductor memory device and manufacturing method thereof

MITSUBISHI ELECTRIC CORP26 citations93

US5859806AJan 12, 1999

Semiconductor memory device and computer

MITSUBISHI ELECTRIC CORP20 citations93

US5752270AMay 12, 1998

Method of executing read and write operations in a synchronous random access memory

MITSUBISHI ELECTRIC CORP28 citations93

US5528545AJun 18, 1996

Semiconductor memory device

MITSUBISHI ELECTRIC CORP26 citations93

US5471427ANov 28, 1995

Circuit for repairing defective bit in semiconductor memory device and repairing method

MITSUBISHI ELECTRIC CORP32 citations93

US5379258AJan 3, 1995

Circuit for repairing defective bit in semiconductor memory device and repairing method

MITSUBISHI ELECTRIC CORP27 citations93

US5301155AApr 5, 1994

Multiblock semiconduction storage device including simultaneous operation of a plurality of block defect determination circuits

MITSUBISHI ELECTRIC CORP38 citations93

US5134585AJul 28, 1992

Circuit for repairing defective bit in semiconductor memory device and repairing method

MITSUBISHI ELECTRIC CORP38 citations93

US4907203AMar 6, 1990

Semiconductor memory device with changeable word organization modes including a test mode

MITSUBISHI ELECTRIC CORP35 citations93

US6026036AFeb 15, 2000

Synchronous semiconductor memory device having set up time of external address signal reduced

MITSUBISHI ELECTRIC CORP41 citations92

US5841961ANov 24, 1998

Semiconductor memory device including a tag memory

MITSUBISHI ELECTRIC CORP26 citations92

US5808930ASep 15, 1998

Semiconductor memory device having improved wiring architecture

MITSUBISHI ELECTRIC CORP32 citations92

US5699308ADec 16, 1997

Semiconductor memory device having two layers of bit lines arranged crossing with each other

MITSUBISHI ELECTRIC CORP25 citations92

US5663905ASep 2, 1997

Semiconductor memory device comprising two kinds of memory cells operating in different access speeds and methods of operating and manufacturing the same

MITSUBISHI ELECTRIC CORP35 citations92

US5563820AOct 8, 1996

Semiconductor memory device having two layers of bit lines arranged crossing with each other

MITSUBISHI ELECTRIC CORP29 citations92

US4988888AJan 29, 1991

CMOS output circuit with intermediate potential setting means

MITSUBISHI ELECTRIC CORP34 citations92

US4811155AMar 7, 1989

Protection circuit for a semiconductor integrated circuit having bipolar transistors

MITSUBISHI ELECTRIC CORP26 citations89

US6023190AFeb 8, 2000

High voltage generation circuit which generates high voltage by digitally adjusting current amount flowing through capacitor

MITSUBISHI ELECTRIC CORP17 citations84

US5929539AJul 27, 1999

Semiconductor memory device adaptable to external power supplies of different voltage levels

MITSUBISHI ELECTRIC CORP19 citations84

US5850367ADec 15, 1998

Static type semiconductor memory with latch circuit amplifying read data read on a sub bit line pair and transferring the amplified read data to a main bit line pair and operation method thereof

MITSUBISHI ELECTRIC CORP17 citations84

US5966324AOct 12, 1999

Static semiconductor memory device driving bit line potential by bipolar transistor shared by adjacent memory cells

MITSUBISHI ELECTRIC CORP18 citations83

US5379248AJan 3, 1995

Semiconductor memory device

MITSUBISHI ELECTRIC CORP19 citations82

US4751683AJun 14, 1988

Static semiconductor memory device comprising word lines each operating at three different voltage levels

MITSUBISHI ELECTRIC CORP20 citations82

US6453399B2Sep 17, 2002

Semiconductor memory device and computer having a synchronization signal indicating that the memory data output is valid

MITSUBISHI ELECTRIC CORP11 citations74

US6327188B1Dec 4, 2001

Synchronous random access memory

MITSUBISHI ELECTRIC CORP4 citations74

US6301678B1Oct 9, 2001

Test circuit for reducing test time in semiconductor memory device having multiple data input/output terminals

MITSUBISHI ELECTRIC CORP11 citations74

US6181612B1Jan 30, 2001

Semiconductor memory capable of burst operation

MITSUBISHI ELECTRIC CORP11 citations74

US6115280ASep 5, 2000

Semiconductor memory capable of burst operation

MITSUBISHI ELECTRIC CORP15 citations74

US6026048AFeb 15, 2000

Synchronous random access memory

MITSUBISHI ELECTRIC CORP4 citations74

US5793670AAug 11, 1998

Static semiconductor memory device including a bipolar transistor in a memory cell, semiconductor device including bipolar transistors and method of manufacturing bipolar transistors

MITSUBISHI ELECTRIC CORP7 citations74

US5781468AJul 14, 1998

Semiconductor memory device comprising two kinds of memory cells operating in different access speeds and methods of operating and manufacturing the same

MITSUBISHI ELECTRIC CORP13 citations74

US5568432AOct 22, 1996

Semiconductor memory device including redundancy memory cell remedying defective memory cell

MITSUBISHI ELECTRIC CORP18 citations74

US5546352AAug 13, 1996

Semiconductor memory device having decoder

MITSUBISHI ELECTRIC CORP9 citations74

US5546345AAug 13, 1996

Semiconductor memory device having bipolar transistor

MITSUBISHI ELECTRIC CORP7 citations74

US5177573AJan 5, 1993

Semiconductor integrated circuit device

MITSUBISHI ELECTRIC CORP7 citations74

US4947374AAug 7, 1990

Semiconductor memeory device in which writing is inhibited in address skew period and controlling method thereof

MITSUBISHI ELECTRIC CORP13 citations74

US4896299AJan 23, 1990

Static semiconductor memory device having function of resetting stored data

MITSUBISHI ELECTRIC CORP19 citations74

US4893282AJan 9, 1990

Semiconductor memory device

MITSUBISHI ELECTRIC CORP19 citations74

US5886934AMar 23, 1999

Semiconductor memory device capable of through rate control of external output signal waveform

MITSUBISHI ELECTRIC CORP11 citations73

US5687111ANov 11, 1997

Static type semiconductor memory device capable of operating at a low voltage and reducing a memory cell area

MITSUBISHI ELECTRIC CORP15 citations73

US5307307AApr 26, 1994

Semiconductor memory device having improved bit line arrangement

MITSUBISHI ELECTRIC CORP10 citations73

US5020029AMay 28, 1991

Static semiconductor memory device with predetermined threshold voltages

MITSUBISHI ELECTRIC CORP19 citations73

Showing the top 50 of 57 patents by PatentIndex Score.

WADA TOMOHISA

Patents

Static Semiconductor memory device

Semiconductor memory device capable of refresh operation in burst mode

Synchronous random access memory

Semiconductor memory device

Static random access memory with reduced soft error rate

Semiconductor memory device having read data multiplexer

Semiconductor integrated circuit device with adjustable high voltage detection circuit

Computer graphics apparatus utilizing cache memory

Static semiconductor memory device and manufacturing method thereof

Semiconductor memory device and computer

Method of executing read and write operations in a synchronous random access memory

Semiconductor memory device

Circuit for repairing defective bit in semiconductor memory device and repairing method

Circuit for repairing defective bit in semiconductor memory device and repairing method

Multiblock semiconduction storage device including simultaneous operation of a plurality of block defect determination circuits

Circuit for repairing defective bit in semiconductor memory device and repairing method

Semiconductor memory device with changeable word organization modes including a test mode

Synchronous semiconductor memory device having set up time of external address signal reduced

Semiconductor memory device including a tag memory

Semiconductor memory device having improved wiring architecture

Semiconductor memory device having two layers of bit lines arranged crossing with each other

Semiconductor memory device comprising two kinds of memory cells operating in different access speeds and methods of operating and manufacturing the same

Semiconductor memory device having two layers of bit lines arranged crossing with each other

CMOS output circuit with intermediate potential setting means

Protection circuit for a semiconductor integrated circuit having bipolar transistors

High voltage generation circuit which generates high voltage by digitally adjusting current amount flowing through capacitor

Semiconductor memory device adaptable to external power supplies of different voltage levels

Static type semiconductor memory with latch circuit amplifying read data read on a sub bit line pair and transferring the amplified read data to a main bit line pair and operation method thereof

Static semiconductor memory device driving bit line potential by bipolar transistor shared by adjacent memory cells

Semiconductor memory device

Static semiconductor memory device comprising word lines each operating at three different voltage levels

Semiconductor memory device and computer having a synchronization signal indicating that the memory data output is valid

Synchronous random access memory

Test circuit for reducing test time in semiconductor memory device having multiple data input/output terminals

Semiconductor memory capable of burst operation

Semiconductor memory capable of burst operation

Synchronous random access memory

Static semiconductor memory device including a bipolar transistor in a memory cell, semiconductor device including bipolar transistors and method of manufacturing bipolar transistors

Semiconductor memory device comprising two kinds of memory cells operating in different access speeds and methods of operating and manufacturing the same

Semiconductor memory device including redundancy memory cell remedying defective memory cell

Semiconductor memory device having decoder

Semiconductor memory device having bipolar transistor

Semiconductor integrated circuit device

Semiconductor memeory device in which writing is inhibited in address skew period and controlling method thereof

Static semiconductor memory device having function of resetting stored data

Semiconductor memory device

Semiconductor memory device capable of through rate control of external output signal waveform

Static type semiconductor memory device capable of operating at a low voltage and reducing a memory cell area

Semiconductor memory device having improved bit line arrangement

Static semiconductor memory device with predetermined threshold voltages