Inventor

CHANG YUNG-JUNG

TW57 patents

⚠️ This page may combine multiple inventors who share the name “CHANG YUNG-JUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHANG YUNG-JUNG

TAIWAN SEMICONDUCTOR MFG CO LTD

Fin field effect transistor (FinFET) device and method for forming the same

Gate structure of field effect transistor with footing

Gate structure of field effect transistor with footing

Mechanisms for forming FinFET device

Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer features

Fin field effect transistor (FinFET) device and method for forming the same

Indented gate end of non-planar transistor

Gate structure of field effect transistor with footing

Methods of forming a semiconductor device with a gate stack having tapered sidewalls

Method and system for diagnosing a semiconductor wafer

Mechanisms for forming FinFET device

Mechanisms for forming FINFET device

Gate structure of field effect transistor with footing

Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer features

High-K film apparatus and method

Embedded source or drain region of transistor with laterally extended portion

Embedded source or drain region of transistor with downward tapered region under facet region

Semiconductor structure and manufacturing method thereof

Fin field effect transistor (FinFET) device and method for forming the same

Fin field effect transistor (FinFET) device and method for forming the same

Strained source and drain (SSD) structure and method for forming the same

Mechanisms for forming FinFET device

Gate structure of field effect transistor with footing

Embedded source or drain region of transistor with downward tapered region under facet region

Fin field effect transistor (FinFET) device and method for forming the same

Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer features

Semiconductor wafer measurement method and system

Embedded source or drain region of transistor with downward tapered region under facet region

Fin field effect transistor (FinFET) device and method for forming the same

Semiconductor wafer measurement method and system

Fin field effect transistor (FinFET) device and method for forming the same

Semiconductor device with a metal gate stack having tapered sidewalls

Method of forming embedded source or drain region of transistor with laterally extended portion

High-K film apparatus and method

Semiconductor structure and manufacturing method thereof

Fin field effect transistor (FinFET) device and method for forming the same

Embedded source or drain region of transistor with downward tapered region under facet region

Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer features

Fin field effect transistor (FinFET) device and method for forming the same

Embedded source or drain region of transistor with downward tapered region under facet region

Fin field effect transistor (FinFET) device and method for forming the same

Fin field effect transistor (FinFET) device and method for forming the same

Method for forming fin field effect transistor (FINFET) device

Methods for forming a semiconductor device with a gate stack having angled sidewalls

TAIWAN SEMICONDUCTOR MFG

Plasma method for stripping ion implanted photoresist layers

Three-step nitride etching process for better critical dimension and better vertical sidewall profile

Metal gate transistor and method for tuning metal gate profile

High-K film apparatus and method

IND TECH RES INST

Calibration equipment and calibration method of a mechanical system

Method for pins detection and insertion of electronic component