P

Inventor

BRIERE MICHAEL A

US108 patents
⚠️ This page may combine multiple inventors who share the name “BRIERE MICHAEL A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BRIERE MICHAEL A

24 patents
US8796738B2Aug 5, 2014

Group III-V device structure having a selectively reduced impurity concentration

BRIERE MICHAEL A14 citations93
US8183595B2May 22, 2012

Normally off III-nitride semiconductor device having a programmable gate

BRIERE MICHAEL A20 citations93
US8148964B2Apr 3, 2012

Monolithic III-nitride power converter

BRIERE MICHAEL A13 citations93
US8084785B2Dec 27, 2011

III-nitride power semiconductor device having a programmable gate

BRIERE MICHAEL A26 citations93
US8338861B2Dec 25, 2012

III-nitride semiconductor device with stepped gate trench and process for its manufacture

BRIERE MICHAEL A18 citations92
US9793259B2Oct 17, 2017

Integrated semiconductor device

BRIERE MICHAEL A6 citations84
US9281388B2Mar 8, 2016

Composite semiconductor device with a SOI substrate having an integrated diode

BRIERE MICHAEL A8 citations84
US9087812B2Jul 21, 2015

Composite semiconductor device with integrated diode

BRIERE MICHAEL A13 citations84
US8981380B2Mar 17, 2015

Monolithic integration of silicon and group III-V devices

BRIERE MICHAEL A7 citations84
US8957454B2Feb 17, 2015

III-Nitride semiconductor structures with strain absorbing interlayer transition modules

BRIERE MICHAEL A10 citations84
US8809909B2Aug 19, 2014

High voltage III-nitride transistor

BRIERE MICHAEL A6 citations84
US8680579B2Mar 25, 2014

Individually controlled multiple III-nitride half bridges

BRIERE MICHAEL A7 citations84
US8674670B2Mar 18, 2014

DC/DC converter with depletion-mode III-nitride switches

BRIERE MICHAEL A11 citations84
US8659030B2Feb 25, 2014

III-nitride heterojunction devices having a multilayer spacer

BRIERE MICHAEL A7 citations84
US8557644B2Oct 15, 2013

Method for fabricating a monolithic integrated composite group III-V and group IV semiconductor device

BRIERE MICHAEL A8 citations84
US8530938B2Sep 10, 2013

Monolithic integrated composite group III-V and group IV semiconductor device and method for fabricating same

BRIERE MICHAEL A6 citations84
US8482035B2Jul 9, 2013

Enhancement mode III-nitride transistors with single gate Dielectric structure

BRIERE MICHAEL A12 citations84
US8395132B2Mar 12, 2013

Ion implanting while growing a III-nitride layer

BRIERE MICHAEL A9 citations84
US8093597B2Jan 10, 2012

In situ dopant implantation and growth of a III-nitride semiconductor body

BRIERE MICHAEL A10 citations84
US8270137B2Sep 18, 2012

Interposer for an integrated DC-DC converter

BRIERE MICHAEL A12 citations83
US8159003B2Apr 17, 2012

III-nitride wafer and devices formed in a III-nitride wafer

BRIERE MICHAEL A5 citations74
US9219058B2Dec 22, 2015

Efficient high voltage switching circuits and monolithic integration of same

BRIERE MICHAEL A4 citations73
US8988133B2Mar 24, 2015

Nested composite switch

BRIERE MICHAEL A4 citations73
US8791503B2Jul 29, 2014

III-nitride semiconductor device with reduced electric field between gate and drain and process for its manufacture

BRIERE MICHAEL A4 citations73

INT RECTIFIER CORP

17 patents
US7915645B2Mar 29, 2011

Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating same

INT RECTIFIER CORP70 citations98
US7863877B2Jan 4, 2011

Monolithically integrated III-nitride power converter

INT RECTIFIER CORP58 citations98
US7902809B2Mar 8, 2011

DC/DC converter including a depletion mode power switch

INT RECTIFIER CORP49 citations94
US9406674B2Aug 2, 2016

Integrated III-nitride D-mode HFET with cascoded pair half bridge

INT RECTIFIER CORP20 citations93
US7839131B2Nov 23, 2010

Gate driving scheme for depletion mode devices in buck converters

INT RECTIFIER CORP21 citations93
US7745849B2Jun 29, 2010

Enhancement mode III-nitride semiconductor device with reduced electric field between the gate and the drain

INT RECTIFIER CORP21 citations93
US9525052B2Dec 20, 2016

Active area shaping of III-nitride devices utilizing a field plate defined by a dielectric body

INT RECTIFIER CORP8 citations84
US9184243B2Nov 10, 2015

Monolithic composite III-nitride transistor with high voltage group IV enable switch

INT RECTIFIER CORP6 citations84
US8866193B2Oct 21, 2014

Method for fabricating a monolithic integrated composite group III-V and group IV semiconductor device

INT RECTIFIER CORP5 citations84
US7999288B2Aug 16, 2011

High voltage durability III-nitride semiconductor device

INT RECTIFIER CORP12 citations84
US7348656B2Mar 25, 2008

Power semiconductor device with integrated passive component

INT RECTIFIER CORP13 citations84
US9362267B2Jun 7, 2016

Group III-V and group IV composite switch

INT RECTIFIER CORP4 citations73
US9343562B2May 17, 2016

Dual-gated group III-V merged transistor

INT RECTIFIER CORP4 citations73
US9281387B2Mar 8, 2016

High voltage durability III-nitride device

INT RECTIFIER CORP3 citations73
US9041067B2May 26, 2015

Integrated half-bridge circuit with low side and high side composite switches

INT RECTIFIER CORP5 citations73
US8969881B2Mar 3, 2015

Power transistor having segmented gate

INT RECTIFIER CORP6 citations73
US9379231B2Jun 28, 2016

Transistor having increased breakdown voltage

INT RECTIFIER CORP4 citations71

INFINEON TECHNOLOGIES AMERICAS CORP

3 patents

MCDONALD TIM

2 patents

BAHRAMIAN HAMID TONY

1 patent

YANG BO

1 patent

CHEAH CHUAN

1 patent

CAO JIANJUN

1 patent

Showing the top 50 of 108 patents by PatentIndex Score.