Inventor
BRIERE MICHAEL A
US108 patents
⚠️ This page may combine multiple inventors who share the name “BRIERE MICHAEL A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
BRIERE MICHAEL A
24 patentsUS8796738B2Aug 5, 2014
Group III-V device structure having a selectively reduced impurity concentration
BRIERE MICHAEL A14 citations93
US8183595B2May 22, 2012
Normally off III-nitride semiconductor device having a programmable gate
BRIERE MICHAEL A20 citations93
US8148964B2Apr 3, 2012
Monolithic III-nitride power converter
BRIERE MICHAEL A13 citations93
US8084785B2Dec 27, 2011
III-nitride power semiconductor device having a programmable gate
BRIERE MICHAEL A26 citations93
US8338861B2Dec 25, 2012
III-nitride semiconductor device with stepped gate trench and process for its manufacture
BRIERE MICHAEL A18 citations92
US9793259B2Oct 17, 2017
Integrated semiconductor device
BRIERE MICHAEL A6 citations84
US9281388B2Mar 8, 2016
Composite semiconductor device with a SOI substrate having an integrated diode
BRIERE MICHAEL A8 citations84
US9087812B2Jul 21, 2015
Composite semiconductor device with integrated diode
BRIERE MICHAEL A13 citations84
US8981380B2Mar 17, 2015
Monolithic integration of silicon and group III-V devices
BRIERE MICHAEL A7 citations84
US8957454B2Feb 17, 2015
III-Nitride semiconductor structures with strain absorbing interlayer transition modules
BRIERE MICHAEL A10 citations84
US8809909B2Aug 19, 2014
High voltage III-nitride transistor
BRIERE MICHAEL A6 citations84
US8680579B2Mar 25, 2014
Individually controlled multiple III-nitride half bridges
BRIERE MICHAEL A7 citations84
US8674670B2Mar 18, 2014
DC/DC converter with depletion-mode III-nitride switches
BRIERE MICHAEL A11 citations84
US8659030B2Feb 25, 2014
III-nitride heterojunction devices having a multilayer spacer
BRIERE MICHAEL A7 citations84
US8557644B2Oct 15, 2013
Method for fabricating a monolithic integrated composite group III-V and group IV semiconductor device
BRIERE MICHAEL A8 citations84
US8530938B2Sep 10, 2013
Monolithic integrated composite group III-V and group IV semiconductor device and method for fabricating same
BRIERE MICHAEL A6 citations84
US8482035B2Jul 9, 2013
Enhancement mode III-nitride transistors with single gate Dielectric structure
BRIERE MICHAEL A12 citations84
US8395132B2Mar 12, 2013
Ion implanting while growing a III-nitride layer
BRIERE MICHAEL A9 citations84
US8093597B2Jan 10, 2012
In situ dopant implantation and growth of a III-nitride semiconductor body
BRIERE MICHAEL A10 citations84
US8270137B2Sep 18, 2012
Interposer for an integrated DC-DC converter
BRIERE MICHAEL A12 citations83
US8159003B2Apr 17, 2012
III-nitride wafer and devices formed in a III-nitride wafer
BRIERE MICHAEL A5 citations74
US9219058B2Dec 22, 2015
Efficient high voltage switching circuits and monolithic integration of same
BRIERE MICHAEL A4 citations73
US8988133B2Mar 24, 2015
Nested composite switch
BRIERE MICHAEL A4 citations73
US8791503B2Jul 29, 2014
III-nitride semiconductor device with reduced electric field between gate and drain and process for its manufacture
BRIERE MICHAEL A4 citations73
INT RECTIFIER CORP
17 patentsUS7915645B2Mar 29, 2011
Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating same
INT RECTIFIER CORP70 citations98
US7863877B2Jan 4, 2011
Monolithically integrated III-nitride power converter
INT RECTIFIER CORP58 citations98
US7902809B2Mar 8, 2011
DC/DC converter including a depletion mode power switch
INT RECTIFIER CORP49 citations94
US9406674B2Aug 2, 2016
Integrated III-nitride D-mode HFET with cascoded pair half bridge
INT RECTIFIER CORP20 citations93
US7839131B2Nov 23, 2010
Gate driving scheme for depletion mode devices in buck converters
INT RECTIFIER CORP21 citations93
US7745849B2Jun 29, 2010
Enhancement mode III-nitride semiconductor device with reduced electric field between the gate and the drain
INT RECTIFIER CORP21 citations93
US9525052B2Dec 20, 2016
Active area shaping of III-nitride devices utilizing a field plate defined by a dielectric body
INT RECTIFIER CORP8 citations84
US9184243B2Nov 10, 2015
Monolithic composite III-nitride transistor with high voltage group IV enable switch
INT RECTIFIER CORP6 citations84
US8866193B2Oct 21, 2014
Method for fabricating a monolithic integrated composite group III-V and group IV semiconductor device
INT RECTIFIER CORP5 citations84
US7999288B2Aug 16, 2011
High voltage durability III-nitride semiconductor device
INT RECTIFIER CORP12 citations84
US7348656B2Mar 25, 2008
Power semiconductor device with integrated passive component
INT RECTIFIER CORP13 citations84
US9362267B2Jun 7, 2016
Group III-V and group IV composite switch
INT RECTIFIER CORP4 citations73
US9343562B2May 17, 2016
Dual-gated group III-V merged transistor
INT RECTIFIER CORP4 citations73
US9281387B2Mar 8, 2016
High voltage durability III-nitride device
INT RECTIFIER CORP3 citations73
US9041067B2May 26, 2015
Integrated half-bridge circuit with low side and high side composite switches
INT RECTIFIER CORP5 citations73
US8969881B2Mar 3, 2015
Power transistor having segmented gate
INT RECTIFIER CORP6 citations73
US9379231B2Jun 28, 2016
Transistor having increased breakdown voltage
INT RECTIFIER CORP4 citations71
INFINEON TECHNOLOGIES AMERICAS CORP
3 patentsUS9449899B2Sep 20, 2016
Semiconductor package with heat spreader
INFINEON TECHNOLOGIES AMERICAS CORP5 citations84
US11605628B2Mar 14, 2023
Integrated III-nitride and silicon device
INFINEON TECHNOLOGIES AMERICAS CORP2 citations73
US9721791B2Aug 1, 2017
Method of fabricating III-nitride semiconductor dies
INFINEON TECHNOLOGIES AMERICAS CORP2 citations73
MCDONALD TIM
2 patentsBAHRAMIAN HAMID TONY
1 patentYANG BO
1 patentCHEAH CHUAN
1 patentCAO JIANJUN
1 patentShowing the top 50 of 108 patents by PatentIndex Score.