Inventor
SU YUH-JIA
US18 patents
⚠️ This page may combine multiple inventors who share the name “SU YUH-JIA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
9 patentsUS5996218ADec 7, 1999
Method of forming an electrostatic chuck suitable for magnetic flux processing
APPLIED MATERIALS INC160 citations99
US5592358AJan 7, 1997
Electrostatic chuck for magnetic flux processing
APPLIED MATERIALS INC307 citations99
US5589002ADec 31, 1996
Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing
APPLIED MATERIALS INC684 citations99
US5685914ANov 11, 1997
Focus ring for semiconductor wafer processing in a plasma reactor
APPLIED MATERIALS INC516 citations98
US6125788AOct 3, 2000
Plasma reactor with enhanced plasma uniformity by gas addition, reduced chamber diameter and reduced RF wafer pedestal diameter
APPLIED MATERIALS INC64 citations96
US5744049AApr 28, 1998
Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same
APPLIED MATERIALS INC68 citations96
US5507874AApr 16, 1996
Method of cleaning of an electrostatic chuck in plasma reactors
APPLIED MATERIALS INC131 citations93
US5528451AJun 18, 1996
Erosion resistant electrostatic chuck
APPLIED MATERIALS INC34 citations92
US5410122AApr 25, 1995
Use of electrostatic forces to reduce particle contamination in semiconductor plasma processing chambers
APPLIED MATERIALS INC36 citations92
NOVELLUS SYSTEMS INC
5 patentsUS7569492B1Aug 4, 2009
Method for post-etch cleans
NOVELLUS SYSTEMS INC19 citations89
US7390755B1Jun 24, 2008
Methods for post etch cleans
NOVELLUS SYSTEMS INC27 citations89
US6955177B1Oct 18, 2005
Methods for post polysilicon etch photoresist and polymer removal with minimal gate oxide loss
NOVELLUS SYSTEMS INC28 citations87
US7160813B1Jan 9, 2007
Etch back process approach in dual source plasma reactors
NOVELLUS SYSTEMS INC22 citations85
US6855225B1Feb 15, 2005
Single-tube interlaced inductively coupling plasma source
NOVELLUS SYSTEMS INC32 citations84
APPLIED KOMATSU TECHNOLOGY INC
3 patentsUS5607602AMar 4, 1997
High-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gas
APPLIED KOMATSU TECHNOLOGY INC63 citations94
US5893757AApr 13, 1999
Tapered profile etching method
APPLIED KOMATSU TECHNOLOGY INC21 citations92
US5843277ADec 1, 1998
Dry-etch of indium and tin oxides with C2H5I gas
APPLIED KOMATSU TECHNOLOGY INC30 citations92