Inventor
KOBAYASHI KIYOTERU
JP22 patents
⚠️ This page may combine multiple inventors who share the name “KOBAYASHI KIYOTERU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
15 patentsUS5629043AMay 13, 1997
Silicon nitride film formation method
MITSUBISHI ELECTRIC CORP69 citations96
US6501125B2Dec 31, 2002
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP20 citations92
US5500816AMar 19, 1996
Non-volatile semiconductor memory device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP39 citations92
US5218217AJun 8, 1993
Dynamic random access memory device and method of manufacturing
MITSUBISHI ELECTRIC CORP22 citations92
US4866493ASep 12, 1989
Semiconductor memory device
MITSUBISHI ELECTRIC CORP25 citations92
US4746377AMay 24, 1988
Semiconductor device with thermally oxidized insulating and arsenic diffusion layers
MITSUBISHI ELECTRIC CORP18 citations82
US4987092AJan 22, 1991
Process for manufacturing stacked semiconductor devices
MITSUBISHI ELECTRIC CORP16 citations74
US6441444B1Aug 27, 2002
Semiconductor device having a nitride barrier for preventing formation of structural defects
MITSUBISHI ELECTRIC CORP8 citations73
US6426529B2Jul 30, 2002
Semiconductor memory
MITSUBISHI ELECTRIC CORP13 citations73
US5495823AMar 5, 1996
Thin film manufacturing method
MITSUBISHI ELECTRIC CORP10 citations73
US5017982AMay 21, 1991
Capacitor in semiconductor device
MITSUBISHI ELECTRIC CORP17 citations73
US6469338B2Oct 22, 2002
Non-volatile semiconductor memory device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP3 citations62
US6144094ANov 7, 2000
Semiconductor device including an insulation film and electrode having nitrogen added thereto
MITSUBISHI ELECTRIC CORP6 citations62
US5460691AOct 24, 1995
Method of treating surface of semiconductor substrate
MITSUBISHI ELECTRIC CORP5 citations62
US5270242ADec 14, 1993
Method for fabricatins dynamic random access memory device having a capacitor for storing impact ionization charges
MITSUBISHI ELECTRIC CORP0 citations42
RENESAS TECH CORP
5 patentsUS6700159B2Mar 2, 2004
Semiconductor device comprising trench-isolated transistors
RENESAS TECH CORP13 citations84
US6710395B2Mar 23, 2004
Non-volatile semiconductor memory device with improved performance
RENESAS TECH CORP8 citations74
US6806532B2Oct 19, 2004
Nonvolatile semiconductor device
RENESAS TECH CORP10 citations73
US6767790B2Jul 27, 2004
Methods of writing/erasing of nonvolatile semiconductor storage device
RENESAS TECH CORP7 citations73
US7517800B2Apr 14, 2009
Semiconductor device and manufacturing method thereof
RENESAS TECH CORP2 citations63