Inventor
HIRAIWA ATSUSHI
JP33 patents
⚠️ This page may combine multiple inventors who share the name “HIRAIWA ATSUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
19 patentsUS6737318B2May 18, 2004
Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
HITACHI LTD105 citations99
US5523058AJun 4, 1996
Ultrasonic irradiation apparatus and processing apparatus based thereon
HITACHI LTD435 citations99
US5466621ANov 14, 1995
Method of manufacturing a semiconductor device having silicon islands
HITACHI LTD137 citations99
US5227329AJul 13, 1993
Method of manufacturing semiconductor device
HITACHI LTD182 citations98
US5504029AApr 2, 1996
Method of producing semiconductor integrated circuit device having memory cell and peripheral circuit MISFETs
HITACHI LTD99 citations97
US4481229ANov 6, 1984
Method for growing silicon-including film by employing plasma deposition
HITACHI LTD143 citations97
US5936726AAug 10, 1999
Inspection method, inspection apparatus and method of production of semiconductor device using them
HITACHI LTD122 citations96
US5346834ASep 13, 1994
Method for manufacturing a semiconductor device and a semiconductor memory device
HITACHI LTD89 citations96
US5153685AOct 6, 1992
Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
HITACHI LTD72 citations96
US5115289AMay 19, 1992
Semiconductor device and semiconductor memory device
HITACHI LTD93 citations96
US5091761AFeb 25, 1992
Semiconductor device having an arrangement of IGFETs and capacitors stacked thereover
HITACHI LTD70 citations96
US4365264ADec 21, 1982
Semiconductor device with high density low temperature deposited Siw Nx Hy Oz passivating layer
HITACHI LTD91 citations95
US5930624AJul 27, 1999
Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring
HITACHI LTD22 citations92
US5053849AOct 1, 1991
Transistor with overlapping gate/drain and two-layered gate structures
HITACHI LTD51 citations90
US6713353B1Mar 30, 2004
Method of manufacturing a semiconductor integrated circuit device
HITACHI LTD12 citations74
US5753550AMay 19, 1998
Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
HITACHI LTD7 citations74
US5426326AJun 20, 1995
Semiconductor device including arrangement for reducing junction degradation
HITACHI LTD17 citations74
US4989056AJan 29, 1991
Semiconductor capacitor
HITACHI LTD9 citations74
US4860071AAug 22, 1989
Semiconductor memory using trench capacitor
HITACHI LTD8 citations74
RENESAS TECH CORP
9 patentsUS7211497B2May 1, 2007
Method for fabricating semiconductor devices
RENESAS TECH CORP13 citations84
US7741677B2Jun 22, 2010
Semiconductor integrated circuit device and manufacturing method thereof
RENESAS TECH CORP4 citations74
US7560772B2Jul 14, 2009
Semiconductor integrated circuit device and manufacturing method thereof
RENESAS TECH CORP4 citations74
US7335561B2Feb 26, 2008
Semiconductor integrated circuit device and manufacturing method thereof
RENESAS TECH CORP8 citations74
US6821854B2Nov 23, 2004
Method of manufacturing a semiconductor integrated circuit device
RENESAS TECH CORP9 citations74
US6794257B2Sep 21, 2004
Method of manufacturing a semiconductor integrated circuit device
RENESAS TECH CORP6 citations74
US7262101B2Aug 28, 2007
Method of manufacturing a semiconductor integrated circuit device
RENESAS TECH CORP5 citations63
US7662696B2Feb 16, 2010
Method for fabricating semiconductor devices
RENESAS TECH CORP0 citations52
US7186604B2Mar 6, 2007
Semiconductor integrated circuit device and method for fabricating the same
RENESAS TECH CORP1 citations52