P

Inventor

LI HONG-JYH

US38 patents
⚠️ This page may combine multiple inventors who share the name “LI HONG-JYH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

31 patents
US7235822B2Jun 26, 2007

Transistor with silicon and carbon layer in the channel region

INFINEON TECHNOLOGIES AG156 citations99
US7755144B2Jul 13, 2010

Multiple-gate MOS transistors

INFINEON TECHNOLOGIES AG116 citations98
US6921691B1Jul 26, 2005

Transistor with dopant-bearing metal in source and drain

INFINEON TECHNOLOGIES AG117 citations98
US7462538B2Dec 9, 2008

Methods of manufacturing multiple gate CMOS transistors having different gate dielectric materials

INFINEON TECHNOLOGIES AG41 citations93
US7510943B2Mar 31, 2009

Semiconductor devices and methods of manufacture thereof

INFINEON TECHNOLOGIES AG20 citations92
US7344934B2Mar 18, 2008

CMOS transistor and method of manufacture thereof

INFINEON TECHNOLOGIES AG41 citations92
US7291526B2Nov 6, 2007

Semiconductor device and method of manufacture thereof

INFINEON TECHNOLOGIES AG39 citations92
US7282773B2Oct 16, 2007

Semiconductor device with high-k dielectric layer

INFINEON TECHNOLOGIES AG39 citations92
US7138680B2Nov 21, 2006

Memory device with floating gate stack

INFINEON TECHNOLOGIES AG42 citations92
US7094671B2Aug 22, 2006

Transistor with shallow germanium implantation region in channel

INFINEON TECHNOLOGIES AG20 citations92
US7005333B2Feb 28, 2006

Transistor with silicon and carbon layer in the channel region

INFINEON TECHNOLOGIES AG21 citations92
US7002224B2Feb 21, 2006

Transistor with doped gate dielectric

INFINEON TECHNOLOGIES AG21 citations92
US8729633B2May 20, 2014

CMOS transistor with dual high-k gate dielectric

INFINEON TECHNOLOGIES AG5 citations84
US7495290B2Feb 24, 2009

Semiconductor devices and methods of manufacture thereof

INFINEON TECHNOLOGIES AG11 citations84
US7253050B2Aug 7, 2007

Transistor device and method of manufacture thereof

INFINEON TECHNOLOGIES AG12 citations84
US7749832B2Jul 6, 2010

Semiconductor devices and methods of manufacture thereof

INFINEON TECHNOLOGIES AG6 citations74
US7592678B2Sep 22, 2009

CMOS transistors with dual high-k gate dielectric and methods of manufacture thereof

INFINEON TECHNOLOGIES AG7 citations74
US7576399B2Aug 18, 2009

Semiconductor device and method of manufacture thereof

INFINEON TECHNOLOGIES AG6 citations74
US7417248B2Aug 26, 2008

Transistor with shallow germanium implantation region in channel

INFINEON TECHNOLOGIES AG7 citations74
US7368356B2May 6, 2008

Transistor with doped gate dielectric

INFINEON TECHNOLOGIES AG7 citations74
US9269635B2Feb 23, 2016

CMOS Transistor with dual high-k gate dielectric

INFINEON TECHNOLOGIES AG2 citations63
US8004047B2Aug 23, 2011

Semiconductor devices and methods of manufacture thereof

INFINEON TECHNOLOGIES AG2 citations63
US7973369B2Jul 5, 2011

Semiconductor devices and methods of manufacture thereof

INFINEON TECHNOLOGIES AG1 citations63
US7964460B2Jun 21, 2011

Method of manufacturing an NMOS device and a PMOS device

INFINEON TECHNOLOGIES AG1 citations63
US7821627B2Oct 26, 2010

Fabrication and test methods and systems

INFINEON TECHNOLOGIES AG4 citations63
US7709901B2May 4, 2010

CMOS transistor and method of manufacture thereof

INFINEON TECHNOLOGIES AG3 citations63
US7570353B2Aug 4, 2009

Fabrication and test methods and systems

INFINEON TECHNOLOGIES AG2 citations63
US7312137B2Dec 25, 2007

Transistor with shallow germanium implantation region in channel

INFINEON TECHNOLOGIES AG3 citations63
US7446379B2Nov 4, 2008

Transistor with dopant-bearing metal in source and drain

INFINEON TECHNOLOGIES AG4 citations62
US9000531B2Apr 7, 2015

Method and manufacture of transistor devices

INFINEON TECHNOLOGIES AG0 citations52
US8685814B2Apr 1, 2014

Transistor device and method of manufacture thereof

INFINEON TECHNOLOGIES AG0 citations52

LI HONG-JYH

7 patents