Inventor
CHILDRESS JEFFREY ROBINSON
US34 patents
⚠️ This page may combine multiple inventors who share the name “CHILDRESS JEFFREY ROBINSON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI GLOBAL STORAGE TECH
25 patentsUS7791844B2Sep 7, 2010
Magnetoresistive sensor having a magnetically stable free layer with a positive magnetostriction
HITACHI GLOBAL STORAGE TECH49 citations94
US7411765B2Aug 12, 2008
CPP-GMR sensor with non-orthogonal free and reference layer magnetization orientation
HITACHI GLOBAL STORAGE TECH25 citations93
US7324313B2Jan 29, 2008
Read sensor having an in-stack biasing structure and an AP coupled free layer structure for increased magnetic stability
HITACHI GLOBAL STORAGE TECH20 citations93
US6870717B2Mar 22, 2005
Semiconductor slider with an integral spin valve transistor structure and method for making same without a bonding step
HITACHI GLOBAL STORAGE TECH21 citations93
US7382586B2Jun 3, 2008
Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer
HITACHI GLOBAL STORAGE TECH22 citations92
US7382573B2Jun 3, 2008
Magnetic write head having a magnetically anisotropic write pole
HITACHI GLOBAL STORAGE TECH11 citations92
US7672090B2Mar 2, 2010
Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer
HITACHI GLOBAL STORAGE TECH8 citations84
US7558028B2Jul 7, 2009
Magnetic head with improved CPP sensor using Heusler alloys
HITACHI GLOBAL STORAGE TECH13 citations84
US7460343B2Dec 2, 2008
Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
HITACHI GLOBAL STORAGE TECH12 citations84
US7446986B2Nov 4, 2008
Magnetic tunnel junction with in stack biasing layer providing orthogonal exchange coupling
HITACHI GLOBAL STORAGE TECH11 citations84
US7436634B2Oct 14, 2008
Magnetically anisotropic shield for use in magnetic data recording
HITACHI GLOBAL STORAGE TECH9 citations84
US7363699B2Apr 29, 2008
Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers
HITACHI GLOBAL STORAGE TECH14 citations84
US7529066B2May 5, 2009
Magnetoresistive sensor having magnetic layers with tailored magnetic anisotropy induced by direct ion milling
HITACHI GLOBAL STORAGE TECH6 citations74
US7466515B2Dec 16, 2008
Magnetic medium having a soft underlayer with a magnetic anisotropy
HITACHI GLOBAL STORAGE TECH6 citations74
US7457085B2Nov 25, 2008
Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers
HITACHI GLOBAL STORAGE TECH7 citations74
US7360300B2Apr 22, 2008
Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer
HITACHI GLOBAL STORAGE TECH8 citations74
US7360299B2Apr 22, 2008
Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
HITACHI GLOBAL STORAGE TECH8 citations74
US7230805B2Jun 12, 2007
Semiconductor slider with an integral spin valve transistor structure and method for making same without a bonding step
HITACHI GLOBAL STORAGE TECH7 citations74
US7833388B2Nov 16, 2010
End point detection for direct ion milling to induce magnetic anisotropy in a magnetic layer
HITACHI GLOBAL STORAGE TECH3 citations63
US7649719B2Jan 19, 2010
Current perpendicular to plane (CPP) magnetoresistive sensor with improved pinned layer
HITACHI GLOBAL STORAGE TECH4 citations63
US7525775B2Apr 28, 2009
Oblique angle etched underlayers for improved exchange biased structures in a magnetoresitive sensor
HITACHI GLOBAL STORAGE TECH3 citations63
US7446984B2Nov 4, 2008
Magnetic random access memory (MRAM) having increased reference layer anisotropy through ion beam etch of magnetic layers
HITACHI GLOBAL STORAGE TECH1 citations63
US7679866B2Mar 16, 2010
CPP spin valve with long spin diffusion length AP1 layers
HITACHI GLOBAL STORAGE TECH2 citations58
US7765675B2Aug 3, 2010
CPP read sensors having constrained current paths made of lithographically-defined conductive vias and methods of making the same
HITACHI GLOBAL STORAGE TECH1 citations52
US7698807B2Apr 20, 2010
Method of manufacturing a magnetic sensor by multiple depositions of varying geometry
HITACHI GLOBAL STORAGE TECH0 citations52
IBM
4 patentsUS6686068B2Feb 3, 2004
Heterogeneous spacers for CPP GMR stacks
IBM89 citations98
US6577476B1Jun 10, 2003
Flux guide structure for a spin valve transistor which includes a slider body semiconductor layer
IBM36 citations92
US6542341B1Apr 1, 2003
Magnetic sensors having an antiferromagnetic layer exchange-coupled to a free layer
IBM40 citations92
US6452761B1Sep 17, 2002
Magneto-resistive and spin-valve sensor gap with reduced thickness and high thermal conductivity
IBM40 citations92