P

Inventor

CHILDRESS JEFFREY ROBINSON

US34 patents
⚠️ This page may combine multiple inventors who share the name “CHILDRESS JEFFREY ROBINSON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HITACHI GLOBAL STORAGE TECH

25 patents
US7791844B2Sep 7, 2010

Magnetoresistive sensor having a magnetically stable free layer with a positive magnetostriction

HITACHI GLOBAL STORAGE TECH49 citations94
US7411765B2Aug 12, 2008

CPP-GMR sensor with non-orthogonal free and reference layer magnetization orientation

HITACHI GLOBAL STORAGE TECH25 citations93
US7324313B2Jan 29, 2008

Read sensor having an in-stack biasing structure and an AP coupled free layer structure for increased magnetic stability

HITACHI GLOBAL STORAGE TECH20 citations93
US6870717B2Mar 22, 2005

Semiconductor slider with an integral spin valve transistor structure and method for making same without a bonding step

HITACHI GLOBAL STORAGE TECH21 citations93
US7382586B2Jun 3, 2008

Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer

HITACHI GLOBAL STORAGE TECH22 citations92
US7382573B2Jun 3, 2008

Magnetic write head having a magnetically anisotropic write pole

HITACHI GLOBAL STORAGE TECH11 citations92
US7672090B2Mar 2, 2010

Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer

HITACHI GLOBAL STORAGE TECH8 citations84
US7558028B2Jul 7, 2009

Magnetic head with improved CPP sensor using Heusler alloys

HITACHI GLOBAL STORAGE TECH13 citations84
US7460343B2Dec 2, 2008

Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer

HITACHI GLOBAL STORAGE TECH12 citations84
US7446986B2Nov 4, 2008

Magnetic tunnel junction with in stack biasing layer providing orthogonal exchange coupling

HITACHI GLOBAL STORAGE TECH11 citations84
US7436634B2Oct 14, 2008

Magnetically anisotropic shield for use in magnetic data recording

HITACHI GLOBAL STORAGE TECH9 citations84
US7363699B2Apr 29, 2008

Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers

HITACHI GLOBAL STORAGE TECH14 citations84
US7529066B2May 5, 2009

Magnetoresistive sensor having magnetic layers with tailored magnetic anisotropy induced by direct ion milling

HITACHI GLOBAL STORAGE TECH6 citations74
US7466515B2Dec 16, 2008

Magnetic medium having a soft underlayer with a magnetic anisotropy

HITACHI GLOBAL STORAGE TECH6 citations74
US7457085B2Nov 25, 2008

Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers

HITACHI GLOBAL STORAGE TECH7 citations74
US7360300B2Apr 22, 2008

Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer

HITACHI GLOBAL STORAGE TECH8 citations74
US7360299B2Apr 22, 2008

Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer

HITACHI GLOBAL STORAGE TECH8 citations74
US7230805B2Jun 12, 2007

Semiconductor slider with an integral spin valve transistor structure and method for making same without a bonding step

HITACHI GLOBAL STORAGE TECH7 citations74
US7833388B2Nov 16, 2010

End point detection for direct ion milling to induce magnetic anisotropy in a magnetic layer

HITACHI GLOBAL STORAGE TECH3 citations63
US7649719B2Jan 19, 2010

Current perpendicular to plane (CPP) magnetoresistive sensor with improved pinned layer

HITACHI GLOBAL STORAGE TECH4 citations63
US7525775B2Apr 28, 2009

Oblique angle etched underlayers for improved exchange biased structures in a magnetoresitive sensor

HITACHI GLOBAL STORAGE TECH3 citations63
US7446984B2Nov 4, 2008

Magnetic random access memory (MRAM) having increased reference layer anisotropy through ion beam etch of magnetic layers

HITACHI GLOBAL STORAGE TECH1 citations63
US7679866B2Mar 16, 2010

CPP spin valve with long spin diffusion length AP1 layers

HITACHI GLOBAL STORAGE TECH2 citations58
US7765675B2Aug 3, 2010

CPP read sensors having constrained current paths made of lithographically-defined conductive vias and methods of making the same

HITACHI GLOBAL STORAGE TECH1 citations52
US7698807B2Apr 20, 2010

Method of manufacturing a magnetic sensor by multiple depositions of varying geometry

HITACHI GLOBAL STORAGE TECH0 citations52

IBM

4 patents

HGST Netherlands BV

2 patents

CHILDRESS JEFFREY ROBINSON

2 patents

HITACHI GLOBAL STORAGE TECH NL

1 patent