Inventor
HEO SEONG-JUN
KR11 patents
⚠️ This page may combine multiple inventors who share the name “HEO SEONG-JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
9 patentsUS6764961B2Jul 20, 2004
Method of forming a metal gate electrode
SAMSUNG ELECTRONICS CO LTD18 citations81
US6797559B2Sep 28, 2004
Method of fabricating semiconductor device having metal conducting layer
SAMSUNG ELECTRONICS CO LTD10 citations74
US7544996B2Jun 9, 2009
Methods of fabricating a semiconductor device having a metal gate pattern
SAMSUNG ELECTRONICS CO LTD4 citations73
US6960515B2Nov 1, 2005
Method of forming a metal gate
SAMSUNG ELECTRONICS CO LTD10 citations71
US7465617B2Dec 16, 2008
Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layer
SAMSUNG ELECTRONICS CO LTD4 citations62
US7306996B2Dec 11, 2007
Methods of fabricating a semiconductor device having a metal gate pattern
SAMSUNG ELECTRONICS CO LTD2 citations62
US7005367B2Feb 28, 2006
Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layer
SAMSUNG ELECTRONICS CO LTD2 citations62
US7772643B2Aug 10, 2010
Methods of fabricating semiconductor device having a metal gate pattern
SAMSUNG ELECTRONICS CO LTD0 citations52
US7098123B2Aug 29, 2006
Methods of forming a semiconductor device having a metal gate electrode and associated devices
SAMSUNG ELECTRONICS CO LTD0 citations50